SI1988DH-T1-E3 VISHAY/SILICONIX SOT-363 Transistors

SI1988DH-T1-E3
  • SI1988DH-T1-E3

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  • Part Number
  • SI1988DH-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Arrays
  • Package
  • SOT-363
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The SI1988DH-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET, DUAL,MOSFET; Current, Id cont:1.3A MOSFET DUAL N-CH 20V(D-S). The SI1988DH-T1-E3 is Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363) Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R. More details for SI1988DH-T1-E3 can be seen below.

Details

Mosfet Array 2 N-Channel (Dual) 20V 1.3A 1.25W Surface Mount SC-70-6 (SOT-363)
Trans MOSFET N-CH 20V 1.3A 6-Pin SC-70 T/R
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SI1988DH-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 15 - May 20 (Choose Expedited Shipping)
EDA / CAD Models
SI1988DH-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1V @ 250μA
Supplier Device Package
SC-70-6 (SOT-363)
Series
TrenchFETR
Rds On Max Id Vgs
168 mOhm @ 1.4A, 4.5V
Power Max
1.25W
Packaging
Digi-ReelR
Package Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance Ciss Vds
110pF @ 10V
Gate Charge Qg Vgs
4.1nC @ 8V
FET Type
2 N-Channel (Dual)
FET Feature
Logic Level Gate
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
1.3A

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