SI1555DL-T1-E3 VISHAY/SILICONIX SOT-363-6 Transistors

SI1555DL-T1-E3
  • SI1555DL-T1-E3

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  • Part Number
  • SI1555DL-T1-E3
  • Brand
  • VISHAY SILICONIX
  • Product Categories
  • FETs - Arrays
  • Package
  • SOT-363-6
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The SI1555DL-T1-E3 from VISHAY/SILICONIX manufacturer is a FETs - Arrays with MOSFET; Transistor Polarity:Dual N/P Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:0.7A; On-Resistance, Rds(on):0.385ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:6-SC-70; Leaded Process Compatible:Yes,MOSFET 20/8 0.7/0.6. The SI1555DL-T1-E3 is Mosfet Array N and P-Channel 20V, 8V 660mA, 570mA 270mW Surface Mount SC-70-6 (SOT-363). More details for SI1555DL-T1-E3 can be seen below.

Details

Mosfet Array N and P-Channel 20V, 8V 660mA, 570mA 270mW Surface Mount SC-70-6 (SOT-363)
Categories
Transistors
Manufacturer
VISHAY/SILICONIX
Veswin Part Number
V1070-SI1555DL-T1-E3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 14 - May 19 (Choose Expedited Shipping)
EDA / CAD Models
SI1555DL-T1-E3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1.4V @ 250μA
Supplier Device Package
SC-70-6 (SOT-363)
Series
TrenchFETR
Rds On Max Id Vgs
385 mOhm @ 660mA, 4.5V
Power Max
270mW
Packaging
Digi-ReelR
Package Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance Ciss Vds
-
Gate Charge Qg Vgs
1.2nC @ 4.5V
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage Vdss
20V, 8V
Current Continuous Drain Id 25°C
660mA, 570mA

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