The SDP8405-003 from HONEYWELL manufacturer is a Optical Sensors - Photodiodes with Silicon Phototransistor,Board Mount Optical Sensors PHOTOTRANSISTOR T1.
The SDP8405-003 is SDP Series Silicon Phototransistor, T-1 Clear Plastic Package The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. PHOTOTRANSISTOR, T1; Transistor Polarity:NPN; Power Consumption:70mW; Viewing Angle:20°; Transistor Case Style:T-1 (3mm); No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Ic Typ:24mA; Fall Time tf:12s; Half Angle:40°; Operating Temperature Range:-40°C to +85°C; Package / Case:T-1; Peak Spectral Response Wavelength:880nm; Rise Time:12s; Sensitivity @ mW / cm Max:24.0@5; Sensitivity @ mW / cm Min:12.0@5; Transistor Type:Photo; Voltage Vcc:5V Infrared Sensors Phototransistor; Power Consumption:70mW; Viewing Angle:20°; No. of Pins:2; Collector Current Typ:24mA; Half Angle:20°; Operating Temperature Range:-40°C to +85°C; Package/Case:T-1; Rise Time:15s; Voltage, Vcc:30V PHOTOTRANSISTOR, T1; Typ Wavelength:880nm; Power Consumption:70mW; Viewing Angle:20°; No. of Pins:2; SVHC:No SVHC; Case Style:T-1; Half Angle:40°; Operating Temperature Range:-40°C to +85°C; Peak Spectral Response Wavelength:880nm; Rise Time:12s; Transistor Type:Photo; Typ Current, Ic:24mA; Voltage Vcc:5V; Fall Time Tf:12s; Max Sensitivity @ mW / cm:24.0@5; Min Sensitivity @ mW/cm:12.0@5 Honeywell Infrared Sensors Detector, Phototransistor; T-1; NPN; 20 deg; 30 V; 0.4 V; 12 mA (Min.); 100 nA IR phototransistor Photoelectric current: 12...24 mA Case colour: Clear Collector-emitter voltage: 30 V Wavelength of max. photosensitivity: 935 nm Phototransistor Chip Silicon 935nm 2-Pin T-1 INFRARED SENSORS Sensor: photoelectric; Output conf: analogue; Mounting: THT; <> Si phototransistor SDP8405 3mm MISC PHOTO SENSOR PICK#115968 PHOTOTRANS T1PKG 12/24MA Sensors, Infrared Sensors, Emitter . More details for SDP8405-003 can be seen below.
Details
SDP Series Silicon Phototransistor, T-1 Clear Plastic Package The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.
PHOTOTRANSISTOR, T1; Transistor Polarity:NPN; Power Consumption:70mW; Viewing Angle:20°; Transistor Case Style:T-1 (3mm); No. of Pins:2; SVHC:No SVHC (20-Jun-2011); Current Ic Typ:24mA; Fall Time tf:12s; Half Angle:40°; Operating Temperature Range:-40°C to +85°C; Package / Case:T-1; Peak Spectral Response Wavelength:880nm; Rise Time:12s; Sensitivity @ mW / cm Max:24.0@5; Sensitivity @ mW / cm Min:12.0@5; Transistor Type:Photo; Voltage Vcc:5V
Infrared Sensors
Phototransistor; Power Consumption:70mW; Viewing Angle:20°; No. of Pins:2; Collector Current Typ:24mA; Half Angle:20°; Operating Temperature Range:-40°C to +85°C; Package/Case:T-1; Rise Time:15s; Voltage, Vcc:30V
PHOTOTRANSISTOR, T1; Typ Wavelength:880nm; Power Consumption:70mW; Viewing Angle:20°; No. of Pins:2; SVHC:No SVHC; Case Style:T-1; Half Angle:40°; Operating Temperature Range:-40°C to +85°C; Peak Spectral Response Wavelength:880nm; Rise Time:12s; Transistor Type:Photo; Typ Current, Ic:24mA; Voltage Vcc:5V; Fall Time Tf:12s; Max Sensitivity @ mW / cm:24.0@5; Min Sensitivity @ mW/cm:12.0@5
Honeywell Infrared Sensors
Detector, Phototransistor; T-1; NPN; 20 deg; 30 V; 0.4 V; 12 mA (Min.); 100 nA
IR phototransistor Photoelectric current: 12...24 mA Case colour: Clear Collector-emitter voltage: 30 V Wavelength of max. photosensitivity: 935 nm
Phototransistor Chip Silicon 935nm 2-Pin T-1
INFRARED SENSORS
Sensor: photoelectric; Output conf: analogue; Mounting: THT; <>
Si phototransistor SDP8405 3mm
MISC PHOTO SENSOR PICK#115968
PHOTOTRANS T1PKG 12/24MA
Sensors, Infrared Sensors, Emitter
- Categories
- Optocoupler / Led / Infrared
- Manufacturer
- Honeywell Solid State Electronics Center
- Veswin Part Number
- V920-SDP8405-003
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 03 - May 08 (Choose Expedited Shipping)
- EDA / CAD Models
- SDP8405-003 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Wavelength
- 935nm
- Voltage Collector Emitter Breakdown Max
- 30V
- Viewing Angle
- 20°
- Type
- Photodetector Transistors
- Series
- *
- Rise Time
- 15 us
- Product
- Phototransistors
- Power Max
- 70mW
- Pd Power Dissipation
- 70 mW
- Packaging
- Bulk
- Package Case
- Radial, 3mm Dia (T-1)
- Orientation
- Top View
- Operating Temperature
- -40°C ~ 85°C (TA)
- Mounting Style
- Through Hole
- Mounting Type
- Through Hole
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Light Current
- 24 mA
- Fall Time
- 15 us
- Dark Current
- 100 nA
- Current Dark Id Max
- 100nA
- Current Collector Ic Max
- 24mA
- Collector Emitter Voltage VCEO Max
- 30 V
- Collector Emitter Saturation Voltage
- 0.4 V
- Collector Emitter Breakdown Voltage
- 30 V
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
