The SDP8405-002 from HONEYWELL manufacturer is a Optical Sensors - Photodiodes with PHOTOTRANSISTOR SILICON NPN T-1.
The SDP8405-002 is SDP Series Silicon Phototransistor, T-1 Clear Plastic Package The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification. SILICON PHOTOTRANS T-1 PLASTIC TRANSISTOR, PHOTO, NPN, T-1; Transistor; TRANSISTOR, PHOTO, NPN, T-1; Transistor Polarity:NPN; Power Consumption:70mW; Viewing Angle:20°; No. of Pins:2; C-E Breakdown Voltage:5V; Dark Current:100nA; Fall Time tf:15s; Leaded Process Compatible:Yes; Light Current:14mA Infrared Sensors Honeywell Infrared Sensors Optical Sensor (Photodetector - "NPN") Phototransistor; Package/Case:T-1; Rise Time:15s; Fall Time, tf:15s; Leaded Process Compatible:Yes; C-E Breakdown Voltage:5V; Dark Current:100nA; Light Current:14mA ;RoHS Compliant: Yes INFARED SENSOR Phototransistor Chip Silicon 935nm 2-Pin T-1 Sensors, Infrared Sensors, Emitter . More details for SDP8405-002 can be seen below.
Details
SDP Series Silicon Phototransistor, T-1 Clear Plastic Package The SDP8405 is an NPN silicon phototransistor transfer molded in a T-1 clear plastic package. Transfer molding of this device assures superior optical centerline performance compared to other molding processes. Lead lengths are staggered to provide a simple method of polarity identification.
SILICON PHOTOTRANS T-1 PLASTIC
TRANSISTOR, PHOTO, NPN, T-1; Transistor; TRANSISTOR, PHOTO, NPN, T-1; Transistor Polarity:NPN; Power Consumption:70mW; Viewing Angle:20°; No. of Pins:2; C-E Breakdown Voltage:5V; Dark Current:100nA; Fall Time tf:15s; Leaded Process Compatible:Yes; Light Current:14mA
Infrared Sensors
Honeywell Infrared Sensors
Optical Sensor (Photodetector - "NPN") Phototransistor; Package/Case:T-1; Rise Time:15s; Fall Time, tf:15s; Leaded Process Compatible:Yes; C-E Breakdown Voltage:5V; Dark Current:100nA; Light Current:14mA ;RoHS Compliant: Yes
INFARED SENSOR
Phototransistor Chip Silicon 935nm 2-Pin T-1
Sensors, Infrared Sensors, Emitter
- Categories
- Sensors
- Manufacturer
- Honeywell Solid State Electronics Center
- Veswin Part Number
- V1550-SDP8405-002
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 06 - May 11 (Choose Expedited Shipping)
- EDA / CAD Models
- SDP8405-002 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Wavelength
- 935nm
- Voltage Collector Emitter Breakdown Max
- 30V
- Viewing Angle
- 20°
- Type
- Photodetector Transistors
- Series
- *
- Rise Time
- 15 us
- Product
- Phototransistors
- Power Max
- 70mW
- Pd Power Dissipation
- 70 mW
- Packaging
- Bulk
- Package Case
- Radial, 3mm Dia (T-1)
- Orientation
- Top View
- Operating Temperature
- -40°C ~ 85°C (TA)
- Mounting Style
- Through Hole
- Mounting Type
- Through Hole
- Minimum Operating Temperature
- - 40 C
- Maximum Operating Temperature
- + 85 C
- Light Current
- 14 mA
- Fall Time
- 15 us
- Dark Current
- 100 nA
- Current Dark Id Max
- 100nA
- Current Collector Ic Max
- 14mA
- Collector Emitter Voltage VCEO Max
- 30 V
- Collector Emitter Saturation Voltage
- 0.4 V
- Collector Emitter Breakdown Voltage
- 30 V
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- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the SDP8405-002 pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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