The PN2907ABU from FAIRCHILD manufacturer is a Transistors (BJT) - Single with PN2907A / MMBT2907A / PZT2907A 60 V PNP General Purpose Transistor.
The PN2907ABU is Bipolar (BJT) Transistor PNP 60V 800mA 200MHz 625mW Through Hole TO-92-3 Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Bag Bipolar Transistors - BJT PNP Transistor General Purpose. More details for PN2907ABU can be seen below.
Details
Bipolar (BJT) Transistor PNP 60V 800mA 200MHz 625mW Through Hole TO-92-3
Trans GP BJT PNP 60V 0.8A 625mW 3-Pin TO-92 Bag
Bipolar Transistors - BJT PNP Transistor General Purpose
- Categories
- Transistors
- Manufacturer
- Fairchild Semiconductor
- Veswin Part Number
- V1070-PN2907ABU
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 10 - May 15 (Choose Expedited Shipping)
- EDA / CAD Models
- PN2907ABU by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Voltage Collector Emitter Breakdown Max
- 60V
- Vce Saturation Max Ib Ic
- 1.6V @ 50mA, 500mA
- Unit Weight
- 0.006314 oz
- Transistor Type
- PNP
- Transistor Polarity
- PNP
- Supplier Device Package
- TO-92-3
- Power Max
- 625mW
- Pd Power Dissipation
- 625 mW
- Part Aliases
- PN2907ABU_NL
- Packaging
- Bulk
- Package Case
- TO-226-3, TO-92-3 (TO-226AA)
- Mounting Style
- Through Hole
- Mounting Type
- Through Hole
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Maximum DC Collector Current
- 0.8 A
- Gain Bandwidth Product fT
- 200 MHz
- Frequency Transition
- 200MHz
- Emitter Base Voltage VEBO
- 5 V
- DC Current Gain hFE Min Ic Vce
- 100 @ 150mA, 10V
- DC Current Gain hFE Max
- 300
- DC Collector Base Gain hfe Min
- 100
- Current Collector Ic Max
- 800mA
- Current Collector Cutoff Max
- 20nA (ICBO)
- Continuous Collector Current
- 0.8 A
- Configuration
- Single
- Collector Emitter Voltage VCEO Max
- 60 V
- Collector Base Voltage VCBO
- 60 V
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