PMV65XP,215 NXP SOT-23 MOS Field Effect Transistors

NXP
  • PMV65XP,215

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  • Part Number
  • PMV65XP,215
  • Product Categories
  • FETs - Single
  • Package
  • SOT-23
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The PMV65XP,215 from NXP manufacturer is a FETs - Single with P-channel TrenchMOS(tm) extremely low level FET - Configuration: Single P-channel ; ID DC: 3.9 A; Qgd (typ): 0.65 nC; RDS(on): [email protected]@2.5V mOhm; VDSmax: 20 V; Package: SOT23 (TO-236AB); Container: Tape reel smd,MOSFET P-CH TRENCH 20V. The PMV65XP,215 is P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB (SOT23) Trans MOSFET P-CH 20V 2.8A 3-Pin TO-236AB T/R MOSFET P-CH TRENCH 20V. More details for PMV65XP,215 can be seen below.

Details

P-Channel 20V 2.8A (Ta) 480mW (Ta) Surface Mount TO-236AB (SOT23)
Trans MOSFET P-CH 20V 2.8A 3-Pin TO-236AB T/R
MOSFET P-CH TRENCH 20V
Categories
MOS Field Effect Transistors
Manufacturer
NXP Semiconductors
Veswin Part Number
V107110-PMV65XP-215-NXP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 12 - May 17 (Choose Expedited Shipping)
EDA / CAD Models
PMV65XP,215 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
900mV @ 250μA
Supplier Device Package
SOT-23 (TO-236AB)
Rds On Max Id Vgs
74 mOhm @ 2.8A, 4.5V
Power Max
480mW
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Input Capacitance Ciss Vds
744pF @ 20V
Gate Charge Qg Vgs
7.7nC @ 4.5V
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage Vdss
20V
Current Continuous Drain Id 25°C
2.8A (Ta)

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  • Q: PMV65XP,215 Warranty?
  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the PMV65XP,215 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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