NTR4502PT1G TAIWAN SOT-23 MOS Field Effect Transistors

NTR4502PT1G
  • NTR4502PT1G

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  • Part Number
  • NTR4502PT1G
  • Product Categories
  • FETs - Single
  • Package
  • SOT-23
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The NTR4502PT1G from TAIWAN manufacturer is a FETs - Single with Power MOSFET -30V, -1.95 A, Single, P-Channel SOT-23; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000,. The NTR4502PT1G is P-Channel 30V 1.13A (Ta) 400mW (Tj) Surface Mount SOT-23-3 (TO-236) Trans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R MOSFET -30V -1.95A P-Channel. More details for NTR4502PT1G can be seen below.

Details

P-Channel 30V 1.13A (Ta) 400mW (Tj) Surface Mount SOT-23-3 (TO-236)
Trans MOSFET P-CH 30V 1.13A 3-Pin SOT-23 T/R
MOSFET -30V -1.95A P-Channel
Categories
MOS Field Effect Transistors
Manufacturer
TAIWAN
Veswin Part Number
V107110-NTR4502PT1G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
NTR4502PT1G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs Gate Source Voltage
- 20 V
Vds Drain Source Breakdown Voltage
- 30 V
Unit Weight
0.050717 oz
Typical Turn On Delay Time
5.2 ns
Typical Turn Off Delay Time
19 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
SOT-23-3 (TO-236)
Series
NTR4502P
Rise Time
12 ns
Rds On Max Id Vgs
200 mOhm @ 1.95A, 10V
Rds On Drain Source Resistance
240 mOhms
Power Max
400mW
Pd Power Dissipation
1.25 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
200pF @ 15V
Id Continuous Drain Current
- 1.95 A
Gate Charge Qg Vgs
10nC @ 10V
Forward Transconductance Min
3 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Standard
Fall Time
12 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
1.13A (Ta)
Configuration
Single
Channel Mode
Enhancement

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