NTR4003NT1G PULSE SOT-23 MOS Field Effect Transistors

PULSE
  • NTR4003NT1G

Images are for reference. See Product Specification

  • Part Number
  • NTR4003NT1G
  • Product Categories
  • FETs - Single
  • Package
  • SOT-23
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The NTR4003NT1G from PULSE manufacturer is a FETs - Single with Power MOSFET 30 V, 0.56 A. Single N-Channel SOT-23 Package; Package: SOT-23 (TO-236) 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 3000,MOSFET NFET 30V .56A 1500M. The NTR4003NT1G is N-Channel 30V 500mA (Ta) 690mW (Ta) Surface Mount SOT-23-3 (TO-236) Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R MOSFET NFET 30V .56A 1500M. More details for NTR4003NT1G can be seen below.

Details

N-Channel 30V 500mA (Ta) 690mW (Ta) Surface Mount SOT-23-3 (TO-236)
Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R
MOSFET NFET 30V .56A 1500M
Categories
MOS Field Effect Transistors
Manufacturer
Pulse A Technitrol Company
Veswin Part Number
V107110-NTR4003NT1G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
NTR4003NT1G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1.4V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
30 V
Unit Weight
0.050717 oz
Typical Turn On Delay Time
16.7 ns
Typical Turn Off Delay Time
65.1 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
SOT-23-3 (TO-236)
Series
NTR4003N
Rise Time
47.9 ns
Rds On Max Id Vgs
1.5 Ohm @ 10mA, 4V
Rds On Drain Source Resistance
1 Ohms
Power Max
690mW
Pd Power Dissipation
690 mW
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-236-3, SC-59, SOT-23-3
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
21pF @ 5V
Id Continuous Drain Current
500 mA
Gate Charge Qg Vgs
1.15nC @ 5V
Forward Transconductance Min
0.33 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Fall Time
47.9 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
500mA (Ta)
Configuration
Single
Channel Mode
Enhancement

PULSE Inventory

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  • A: We Provide 90 days warranty for our product.
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PULSE Obsolete Part

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