The NTMFS4841NT1G from ON manufacturer is a FETs - Single with Power MOSFET 30 V, 57 A, Single N-Channel, SO-8 FL; Package: SO8FL / DFN6 5x6, 1.27P; No of Pins: 6; Container: Tape and Reel; Qty per Container: 1500,MOSFET NFET 30V 57A 7MOHM.
The NTMFS4841NT1G is N-Channel 30V 8.3A (Ta), 57A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL) Trans MOSFET N-CH 30V 13.1A 5-Pin(4+Tab) SO-FL T/R MOSFET NFET 30V 57A 7MOHM. More details for NTMFS4841NT1G can be seen below.
Details
N-Channel 30V 8.3A (Ta), 57A (Tc) 870mW (Ta), 41.7W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Trans MOSFET N-CH 30V 13.1A 5-Pin(4+Tab) SO-FL T/R
MOSFET NFET 30V 57A 7MOHM
- Categories
- MOS Drive
- Manufacturer
- ON Semiconductor
- Veswin Part Number
- V7583-NTMFS4841NT1G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 01 - May 06 (Choose Expedited Shipping)
- EDA / CAD Models
- NTMFS4841NT1G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.5V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 30 V
- Typical Turn On Delay Time
- 13.5 ns
- Typical Turn Off Delay Time
- 15.5 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- 5-DFN, 8-SO Flat Lead (5x6)
- Series
- NTMFS4841N
- Rise Time
- 66.5 ns
- Rds On Max Id Vgs
- 7 mOhm @ 30A, 10V
- Rds On Drain Source Resistance
- 7 mOhms
- Power Max
- 870mW
- Pd Power Dissipation
- 5 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- 8-PowerTDFN, 5 Leads
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 1436pF @ 12V
- Id Continuous Drain Current
- 13.1 A
- Gate Charge Qg Vgs
- 17nC @ 4.5V
- Forward Transconductance Min
- 16 S
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 7.5 ns
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 8.3A (Ta), 57A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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