NTJD4105CT1G ON SOT-363-6 Transistors

ON

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  • Part Number
  • NTJD4105CT1G
  • Brand
  • ON
  • Product Categories
  • FETs - Arrays
  • Package
  • SOT-363-6
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The NTJD4105CT1G from ON manufacturer is a FETs - Arrays with Small Signal MOSFET 20 V / −8.0 V, Complementary, +0.63 A / −0.775 A, SC−88,MOSFET 20V/-8V 0.63A/-.775A Complementary. The NTJD4105CT1G is Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363 MOSFET 20V/-8V 0.63A/-.775A Complementary. More details for NTJD4105CT1G can be seen below.

Details

Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
MOSFET 20V/-8V 0.63A/-.775A Complementary
Categories
Transistors
Manufacturer
ON Semiconductor
Veswin Part Number
V1070-NTJD4105CT1G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 10 - May 15 (Choose Expedited Shipping)
EDA / CAD Models
NTJD4105CT1G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1.5V @ 250μA
Vgs Gate Source Voltage
12 V 8 V
Vds Drain Source Breakdown Voltage
20 V - 8 V
Unit Weight
0.000265 oz
Typical Turn On Delay Time
83 nS 13 nS
Typical Turn Off Delay Time
786 nS 50 nS
Transistor Type
1 N-Channel 1 P-Channel
Transistor Polarity
N-Channel P-Channel
Technology
Si
Supplier Device Package
SC-88/SC70-6/SOT-363
Series
NTJD4105C
Rise Time
227 nS 23 nS
Rds On Max Id Vgs
375 mOhm @ 630mA, 4.5V
Rds On Drain Source Resistance
375 mOhms 300 mOhms
Qg Gate Charge
1.3 nC 2.2 nC
Power Max
270mW
Pd Power Dissipation
270 mW
Packaging
Digi-ReelR Alternate Packaging
Package Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
46pF @ 20V
Id Continuous Drain Current
630 mA
Gate Charge Qg Vgs
3nC @ 4.5V
Forward Transconductance Min
2 S 2 S
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Fall Time
506 nS 36 nS
Drain to Source Voltage Vdss
20V, 8V
Current Continuous Drain Id 25°C
630mA, 775mA
Configuration
N-Channel P-Channel
Channel Mode
Enhancement

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  • A: We Provide 90 days warranty for our product.
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