The NE3509M04-T2-A from CEL/RENESAS/NEC manufacturer is a RF FETs with Trans JFET N-CH 4V 60mA.
The NE3509M04-T2-A is RF Mosfet HFET 2V 10mA 2GHz 17.5dB 11dBm M04 Trans FET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET. More details for NE3509M04-T2-A can be seen below.
Details
RF Mosfet HFET 2V 10mA 2GHz 17.5dB 11dBm M04
Trans FET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
- Categories
- Transistors
- Manufacturer
- CEL/RENESAS/NEC
- Veswin Part Number
- V1070-NE3509M04-T2-A
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 10 - May 15 (Choose Expedited Shipping)
- EDA / CAD Models
- NE3509M04-T2-A by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Breakdown Voltage
- - 3 V
- Vds Drain Source Breakdown Voltage
- 4 V
- Transistor Type
- HFET
- Transistor Polarity
- N-Channel
- Technology
- GaAs
- Pd Power Dissipation
- 150 mW
- Packaging
- Reel
- Package Case
- FTSMM-4 (M04)
- P1dB Compression Point
- 11 dBm
- Operating Frequency
- 2 GHz
- NF Noise Figure
- 0.4 dB
- Mounting Style
- SMD/SMT
- Maximum Operating Temperature
- + 150 C
- Id Continuous Drain Current
- 60 mA
- Gain
- 17.5 dB
- Forward Transconductance Min
- 80 mS
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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