NE3509M04-T2-A CEL/RENESAS/NEC SOT-343 Transistors

NE3509M04-T2-A
  • NE3509M04-T2-A

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  • Part Number
  • NE3509M04-T2-A
  • Brand
  • CEL RENESAS NEC
  • Product Categories
  • RF FETs
  • Package
  • SOT-343
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The NE3509M04-T2-A from CEL/RENESAS/NEC manufacturer is a RF FETs with Trans JFET N-CH 4V 60mA. The NE3509M04-T2-A is RF Mosfet HFET 2V 10mA 2GHz 17.5dB 11dBm M04 Trans FET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET. More details for NE3509M04-T2-A can be seen below.

Details

RF Mosfet HFET 2V 10mA 2GHz 17.5dB 11dBm M04
Trans FET N-CH 4V 60mA 4-Pin Thin-Type Super Mini-Mold
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Categories
Transistors
Manufacturer
CEL/RENESAS/NEC
Veswin Part Number
V1070-NE3509M04-T2-A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 10 - May 15 (Choose Expedited Shipping)
EDA / CAD Models
NE3509M04-T2-A by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Breakdown Voltage
- 3 V
Vds Drain Source Breakdown Voltage
4 V
Transistor Type
HFET
Transistor Polarity
N-Channel
Technology
GaAs
Pd Power Dissipation
150 mW
Packaging
Reel
Package Case
FTSMM-4 (M04)
P1dB Compression Point
11 dBm
Operating Frequency
2 GHz
NF Noise Figure
0.4 dB
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
60 mA
Gain
17.5 dB
Forward Transconductance Min
80 mS

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