NE3508M04-T2-A CEL SOT-343 Transistors

CEL
  • NE3508M04-T2-A

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  • Part Number
  • NE3508M04-T2-A
  • Product Categories
  • RF FETs
  • Package
  • SOT-343
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The NE3508M04-T2-A from CEL manufacturer is a RF FETs with HETERO JUNCTION FIELD EFFECT TRANSISITOR,JFET L to S Band Lo Noise Amplifier N-Ch HJFET. The NE3508M04-T2-A is RF Mosfet HFET 2V 10mA 2GHz 14dB 18dBm F4TSMM, M04 RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET. More details for NE3508M04-T2-A can be seen below.

Details

RF Mosfet HFET 2V 10mA 2GHz 14dB 18dBm F4TSMM, M04
RF JFET Transistors L to S Band Lo Noise Amplifier N-Ch HJFET
Categories
Transistors
Manufacturer
California Eastern Laboratories(CEL)
Veswin Part Number
V1070-NE3508M04-T2-A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
NE3508M04-T2-A by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Breakdown Voltage
- 3 V
Vds Drain Source Breakdown Voltage
4 V
Transistor Type
HFET
Transistor Polarity
N-Channel
Technology
GaAs
Pd Power Dissipation
175 mW
Packaging
Reel
Package Case
FTSMM-4 (M04)
P1dB Compression Point
18 dBm
Operating Frequency
2 GHz
NF Noise Figure
0.45 dB
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
120 mA
Gain
14 dB
Forward Transconductance Min
100 mS

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