The NDD04N60Z-1G from ON manufacturer is a FETs - Single with Power MOSFET 600V 4A 2 Ohm Single N-Channel .
The NDD04N60Z-1G is N-Channel 600V 4.1A (Tc) 83W (Tc) Through Hole I-Pak Trans MOSFET N-CH 600V 4.1A 3-Pin(3+Tab) IPAK Tube MOSFET NFET IPAK 600V 4A 1.8R. More details for NDD04N60Z-1G can be seen below.
Details
N-Channel 600V 4.1A (Tc) 83W (Tc) Through Hole I-Pak
Trans MOSFET N-CH 600V 4.1A 3-Pin(3+Tab) IPAK Tube
MOSFET NFET IPAK 600V 4A 1.8R
- Categories
- Transistors
- Manufacturer
- ON Semiconductor
- Veswin Part Number
- V1070-NDD04N60Z-1G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 05 - May 10 (Choose Expedited Shipping)
- EDA / CAD Models
- NDD04N60Z-1G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Gate Source Threshold Voltage
- 4.5 V
- Vds Drain Source Breakdown Voltage
- 600 V
- Unit Weight
- 0.139332 oz
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Rds On Drain Source Resistance
- 1.8 Ohms
- Qg Gate Charge
- 19 nC
- Pd Power Dissipation
- 83 W
- Packaging
- Tube
- Package Case
- IPAK-3
- Number of Channels
- 1 Channel
- Mounting Style
- Through Hole
- Id Continuous Drain Current
- 4.1 A
- Forward Transconductance Min
- 3.3 S
- Configuration
- Single
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- A: We Provide 90 days warranty for our product.
- Q: NDD04N60Z-1G Technical Support?
-
A: Yes, Our product technical engineer will help you with the NDD04N60Z-1G pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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