NDD04N60Z-1G ON TO-251 Transistors

ON
  • NDD04N60Z-1G

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  • Part Number
  • NDD04N60Z-1G
  • Brand
  • ON
  • Product Categories
  • FETs - Single
  • Package
  • TO-251
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The NDD04N60Z-1G from ON manufacturer is a FETs - Single with Power MOSFET 600V 4A 2 Ohm Single N-Channel . The NDD04N60Z-1G is N-Channel 600V 4.1A (Tc) 83W (Tc) Through Hole I-Pak Trans MOSFET N-CH 600V 4.1A 3-Pin(3+Tab) IPAK Tube MOSFET NFET IPAK 600V 4A 1.8R. More details for NDD04N60Z-1G can be seen below.

Details

N-Channel 600V 4.1A (Tc) 83W (Tc) Through Hole I-Pak
Trans MOSFET N-CH 600V 4.1A 3-Pin(3+Tab) IPAK Tube
MOSFET NFET IPAK 600V 4A 1.8R
Categories
Transistors
Manufacturer
ON Semiconductor
Veswin Part Number
V1070-NDD04N60Z-1G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 05 - May 10 (Choose Expedited Shipping)
EDA / CAD Models
NDD04N60Z-1G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
4.5 V
Vds Drain Source Breakdown Voltage
600 V
Unit Weight
0.139332 oz
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rds On Drain Source Resistance
1.8 Ohms
Qg Gate Charge
19 nC
Pd Power Dissipation
83 W
Packaging
Tube
Package Case
IPAK-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Id Continuous Drain Current
4.1 A
Forward Transconductance Min
3.3 S
Configuration
Single

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the NDD04N60Z-1G pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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