MTB50P03HDLT4G ON D2PAK Transistors

ON
  • MTB50P03HDLT4G

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  • Part Number
  • MTB50P03HDLT4G
  • Brand
  • ON
  • Product Categories
  • FETs - Single
  • Package
  • D2PAK
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The MTB50P03HDLT4G from ON manufacturer is a FETs - Single with Power MOSFET 50 Amps, 30 Volts, Logic Level; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800,MOSFET PFET D2PAK 30V 50A 25mOhm. The MTB50P03HDLT4G is P-Channel 30V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R MOSFET PFET D2PAK 30V 50A 25mOhm. More details for MTB50P03HDLT4G can be seen below.

Details

P-Channel 30V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK
Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
MOSFET PFET D2PAK 30V 50A 25mOhm
Categories
Transistors
Manufacturer
ON Semiconductor
Veswin Part Number
V1070-MTB50P03HDLT4G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 11 - May 16 (Choose Expedited Shipping)
EDA / CAD Models
MTB50P03HDLT4G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2V @ 250μA
Vgs Gate Source Voltage
15 V
Vds Drain Source Breakdown Voltage
- 30 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
22 ns
Typical Turn Off Delay Time
90 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Supplier Device Package
D2PAK
Series
MTB50P03HDL
Rise Time
340 ns
Rds On Max Id Vgs
25 mOhm @ 25A, 5V
Rds On Drain Source Resistance
25 mOhms
Power Max
2.5W
Pd Power Dissipation
125 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
4900pF @ 25V
Id Continuous Drain Current
50 A
Gate Charge Qg Vgs
100nC @ 5V
Forward Transconductance Min
20 S
FET Type
MOSFET P-Channel, Metal Oxide
FET Feature
Logic Level Gate
Fall Time
218 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
50A (Tc)
Configuration
Single
Channel Mode
Enhancement

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  • Q: MTB50P03HDLT4G Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: MTB50P03HDLT4G Technical Support?
  • A: Yes, Our product technical engineer will help you with the MTB50P03HDLT4G pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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