The MTB50P03HDLT4G from ON manufacturer is a FETs - Single with Power MOSFET 50 Amps, 30 Volts, Logic Level; Package: D2PAK 3 LEAD; No of Pins: 3; Container: Tape and Reel; Qty per Container: 800,MOSFET PFET D2PAK 30V 50A 25mOhm.
The MTB50P03HDLT4G is P-Channel 30V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R MOSFET PFET D2PAK 30V 50A 25mOhm. More details for MTB50P03HDLT4G can be seen below.
Details
P-Channel 30V 50A (Tc) 2.5W (Ta), 125W (Tc) Surface Mount D2PAK
Trans MOSFET P-CH 30V 50A 3-Pin(2+Tab) D2PAK T/R
MOSFET PFET D2PAK 30V 50A 25mOhm
- Categories
- Transistors
- Manufacturer
- ON Semiconductor
- Veswin Part Number
- V1070-MTB50P03HDLT4G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 11 - May 16 (Choose Expedited Shipping)
- EDA / CAD Models
- MTB50P03HDLT4G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2V @ 250μA
- Vgs Gate Source Voltage
- 15 V
- Vds Drain Source Breakdown Voltage
- - 30 V
- Unit Weight
- 0.139332 oz
- Typical Turn On Delay Time
- 22 ns
- Typical Turn Off Delay Time
- 90 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- D2PAK
- Series
- MTB50P03HDL
- Rise Time
- 340 ns
- Rds On Max Id Vgs
- 25 mOhm @ 25A, 5V
- Rds On Drain Source Resistance
- 25 mOhms
- Power Max
- 2.5W
- Pd Power Dissipation
- 125 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 4900pF @ 25V
- Id Continuous Drain Current
- 50 A
- Gate Charge Qg Vgs
- 100nC @ 5V
- Forward Transconductance Min
- 20 S
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Fall Time
- 218 ns
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 50A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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Commercial and Mil-Spec components to OEM customers, CEM customers and Repair Centers worldwide. We maintain a large inventory of electronic components,
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- Q: MTB50P03HDLT4G Warranty?
- A: We Provide 90 days warranty for our product.
- Q: MTB50P03HDLT4G Technical Support?
-
A: Yes, Our product technical engineer will help you with the MTB50P03HDLT4G pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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