The MB85R256FPFCN-G-BNDE1 from FUJITSU manufacturer is a Memory with IC FRAM 256KBIT 150NS 28TSOP. The MB85R256FPFCN-G-BNDE1 is FRAM (Ferroelectric RAM) Memory IC 256Kb (32K x 8) Parallel 150ns 28-TSOP I FRAM 256Kbit Parallel 3.3V 28-Pin TSOP-I Tray. More details for MB85R256FPFCN-G-BNDE1 can be seen below.
The MB85R256FPFCN-G-BNDE1 is a 256-Kilobit (Kb) Ferroelectric Random-Access Memory (FRAM) module manufactured by Fujitsu Semiconductor Limited. FRAM is a non-volatile memory technology that combines the benefits of both RAM (Random-Access Memory) and Flash memory, offering fast read and write access times along with data retention even during power loss.
Capacity: 256 Kilobits (Kb) or 32 Kilobytes (KB).
Non-volatile memory: Data is retained even when power is removed, similar to Flash memory, but with much faster write times and endurance.
Fast read and write access times: Allows for quick data access and updates.
Low power consumption: Consumes less power during read and write operations compared to traditional Flash memory.
High endurance: Supports a high number of read and write cycles, making it suitable for applications with frequent data updates.
Package: 8-pin SOP (Small Outline Package).
Industrial applications: Used in data logging, event storage, and other applications requiring non-volatile memory with fast write times.
Smart meters: Used for storing energy usage and metering data.
IoT (Internet of Things) devices: Suitable for low-power, battery-operated devices that need non-volatile memory for data storage.
Automotive applications: Used in applications like data recorders, ECUs (Electronic Control Units), and other automotive systems requiring non-volatile memory.
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