The K4H561638H-UCB3 from SAMSUNG manufacturer is a Memory with 128Mb DDR SDRAM.
More details for K4H561638H-UCB3 can be seen below.
Details
The K4H561638H-UCB3 is a 512 Megabit (Mb) Double Data Rate 2 (DDR2) Synchronous Dynamic Random-Access Memory (SDRAM) module manufactured by Samsung. It is commonly used in various electronic devices that require high-speed memory access.
Feature
Capacity: 512 Megabits (Mb) or 64 Megabytes (MB).
Organization: 32 Megabits x 16 bits.
Speed: 5 nanoseconds (ns) clock cycle time (equivalent to 200 MHz data rate for DDR2 SDRAM).
Voltage: 1.8 volts (V) ± 0.1V.
Low power consumption: Operates at a lower voltage and consumes less power compared to earlier generation memories.
Package: 84-ball BGA (Ball Grid Array) package.
Application
Computers: Used in desktops, laptops, and servers to provide fast main memory for running applications and the operating system.
Networking equipment: Used in routers, switches, and other network devices to handle data packets efficiently.
Communication devices: Used in smartphones, tablets, and other mobile devices for data storage and fast access.
Industrial applications: Can be used in various industrial systems that require high-speed memory access.
- Categories
- DDR
- Manufacturer
- Samsung Semiconductor
- Veswin Part Number
- V1518-K4H561638H-UCB3
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 07 - May 12 (Choose Expedited Shipping)
- EDA / CAD Models
- K4H561638H-UCB3 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Supply Voltage
- 1.8V
- Speed Grade
- DDR2-800
- Row Cycle Time
- 31.25 ns
- Refresh Period
- 7.8 µs
- Product Type
- DDR2 SDRAM
- Product Name
- K4H561638H-UCB3
- Precharge Time
- 18 ns
- Package Type
- 84-ball
- Package
- FBGA
- Organization
- 16 Meg x 16
- Operating Temperature Range
- 0°C to +85°C
- Memory Type
- DDR2 SDRAM
- Memory Size
- 1 Gigabit
- Memory Configuration
- 4 Banks x 16 Meg x 16
- Manufacturer
- Samsung
- Features
- Synchronous Interface, Burst Mode, Auto Precharge
- Data Rate
- 800 Mbps (DDR2)
- CAS Latency
- 6
- Burst Length
- 4, 8
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datasheet in pdf, manual, schematic, equivalent, cross reference.
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