K4H511638C-UCB3 SAMSUNG TSOP-66 DDR

SAMSUNG
  • K4H511638C-UCB3

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  • Part Number
  • K4H511638C-UCB3
  • Product Categories
  • Memory
  • Package
  • TSOP-66
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The K4H511638C-UCB3 from SAMSUNG manufacturer is a Memory with 512Mb C-die DDR SDRAM Specification. More details for K4H511638C-UCB3 can be seen below.

Details

The K4H511638C-UCB3 is a 512 Megabit (Mb) Double Data Rate (DDR) Synchronous Dynamic Random-Access Memory (SDRAM) manufactured by Samsung Electronics. It is commonly used in various electronic devices that require high-speed memory access.


Feature

Capacity: 512 Megabits (Mb) or 64 Megabytes (MB).

Organization: 32 Megabits x 16 bits.

Speed: 5 nanoseconds (ns) clock cycle time (equivalent to 200 MHz data rate for DDR SDRAM).

Voltage: 2.5 volts (V) ± 0.2V.

Low power consumption: Operates at a lower voltage and consumes less power compared to earlier generation memories.

Package: 66-ball TSOP (Thin Small Outline Package) or other variants.


Application

Computers: Used in desktops, laptops, and servers to provide fast main memory for running applications and the operating system.

Networking equipment: Used in routers, switches, and other network devices to handle data packets efficiently.

Communication devices: Used in smartphones, tablets, and other mobile devices for data storage and fast access.

Industrial applications: Can be used in various industrial systems that require high-speed memory access.


Categories
DDR
Manufacturer
Samsung Semiconductor
Veswin Part Number
V1518-K4H511638C-UCB3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 07 - May 12 (Choose Expedited Shipping)
EDA / CAD Models
K4H511638C-UCB3 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Supply Voltage
2.5V
Speed Grade
DDR-333 (PC2700)
Row Cycle Time
7.5 ns
Refresh Period
7.8 µs
Product Type
DDR SDRAM
Product Name
K4H511638C-UCB3
Precharge Time
15 ns
Package Type
66-pin
Package
TSOP
Organization
16 Meg x 16
Operating Temperature Range
0°C to +70°C
Memory Type
DDR SDRAM
Memory Size
512 Megabits (64 Megabytes)
Memory Configuration
4 Banks x 16 Meg x 16
Manufacturer
Samsung Electronics
Features
Synchronous Interface, Burst Mode, Auto Precharge
Data Rate
333 Mbps (DDR)
CAS Latency
2.5
Burst Length
4, 8

SAMSUNG Inventory

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the K4H511638C-UCB3 pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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