IRLR2905ZTRPBF IR TO-252-2 MOS Field Effect Transistors

IR
  • IRLR2905ZTRPBF

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  • Part Number
  • IRLR2905ZTRPBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-252-2
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The IRLR2905ZTRPBF from IR manufacturer is a FETs - Single with MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC. The IRLR2905ZTRPBF is N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak Trans MOSFET N-CH Si 55V 60A 3-Pin(2+Tab) DPAK T/R MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC. More details for IRLR2905ZTRPBF can be seen below.

Details

N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH Si 55V 60A 3-Pin(2+Tab) DPAK T/R
MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC
Categories
MOS Field Effect Transistors
Manufacturer
International Rectifier
Veswin Part Number
V107110-IRLR2905ZTRPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
IRLR2905ZTRPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 250μA
Vgs th Gate Source Threshold Voltage
3 V
Vgs Gate Source Voltage
16 V
Vds Drain Source Breakdown Voltage
55 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
14 ns
Typical Turn Off Delay Time
24 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
D-Pak
Series
HEXFETR
Rise Time
130 ns
Rds On Max Id Vgs
13.5 mOhm @ 36A, 10V
Rds On Drain Source Resistance
13.5 mOhms
Qg Gate Charge
23 nC
Power Max
110W
Pd Power Dissipation
110 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C ~ 175°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Input Capacitance Ciss Vds
1570pF @ 25V
Id Continuous Drain Current
60 A
Gate Charge Qg Vgs
35nC @ 5V
Forward Transconductance Min
25 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Fall Time
33 ns
Drain to Source Voltage Vdss
55V
Current Continuous Drain Id 25°C
42A (Tc)
Configuration
Single
Channel Mode
Enhancement

IR Inventory

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  • A: We Provide 90 days warranty for our product.
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