The IRLR2905ZTRPBF from IR manufacturer is a FETs - Single with MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC.
The IRLR2905ZTRPBF is N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak Trans MOSFET N-CH Si 55V 60A 3-Pin(2+Tab) DPAK T/R MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC. More details for IRLR2905ZTRPBF can be seen below.
Details
N-Channel 55V 42A (Tc) 110W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH Si 55V 60A 3-Pin(2+Tab) DPAK T/R
MOSFET 55V 1 N-CH HEXFET 27mOhms 32nC
- Categories
- MOS Field Effect Transistors
- Manufacturer
- International Rectifier
- Veswin Part Number
- V107110-IRLR2905ZTRPBF
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 04 - May 09 (Choose Expedited Shipping)
- EDA / CAD Models
- IRLR2905ZTRPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 3V @ 250μA
- Vgs th Gate Source Threshold Voltage
- 3 V
- Vgs Gate Source Voltage
- 16 V
- Vds Drain Source Breakdown Voltage
- 55 V
- Unit Weight
- 0.139332 oz
- Typical Turn On Delay Time
- 14 ns
- Typical Turn Off Delay Time
- 24 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- D-Pak
- Series
- HEXFETR
- Rise Time
- 130 ns
- Rds On Max Id Vgs
- 13.5 mOhm @ 36A, 10V
- Rds On Drain Source Resistance
- 13.5 mOhms
- Qg Gate Charge
- 23 nC
- Power Max
- 110W
- Pd Power Dissipation
- 110 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Input Capacitance Ciss Vds
- 1570pF @ 25V
- Id Continuous Drain Current
- 60 A
- Gate Charge Qg Vgs
- 35nC @ 5V
- Forward Transconductance Min
- 25 S
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Fall Time
- 33 ns
- Drain to Source Voltage Vdss
- 55V
- Current Continuous Drain Id 25°C
- 42A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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