The IRLML5103TRPBF from IR manufacturer is a FETs - Single with -30V Single P-Channel HEXFET Power MOSFET in a Micro 3 package; Similar to IRLML5103 with Tape and Reel and Lead Free Packaging.
The IRLML5103TRPBF is P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3?/SOT-23 Trans MOSFET P-CH 30V 0.76A 3-Pin SOT-23 T/R MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl. More details for IRLML5103TRPBF can be seen below.
Details
P-Channel 30V 760mA (Ta) 540mW (Ta) Surface Mount Micro3?/SOT-23
Trans MOSFET P-CH 30V 0.76A 3-Pin SOT-23 T/R
MOSFET MOSFT P-Ch -0.61A 600mOhm 3.4nC LogLvl
- Categories
- MOS Field Effect Transistors
- Manufacturer
- International Rectifier
- Veswin Part Number
- V107110-IRLML5103TRPBF-
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 04 - May 09 (Choose Expedited Shipping)
- EDA / CAD Models
- IRLML5103TRPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 1V @ 250μA
- Vgs th Gate Source Threshold Voltage
- - 1 V
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- - 30 V
- Unit Weight
- 0.050717 oz
- Typical Turn On Delay Time
- 10 ns
- Typical Turn Off Delay Time
- 23 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- Micro3?/SOT-23
- Series
- HEXFETR
- Rise Time
- 8.2 ns
- Rds On Max Id Vgs
- 600 mOhm @ 600mA, 10V
- Rds On Drain Source Resistance
- 600 mOhms
- Qg Gate Charge
- 3.4 nC
- Power Max
- 540mW
- Pd Power Dissipation
- 540 mW
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-236-3, SC-59, SOT-23-3
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 75pF @ 25V
- Id Continuous Drain Current
- - 760 mA
- Gate Charge Qg Vgs
- 5.1nC @ 10V
- Forward Transconductance Min
- 0.44 S
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 16 ns
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 760mA (Ta)
- Configuration
- Single
![IR Inventory]( "IR Inventory")
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- Q: IRLML5103TRPBF Warranty?
- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the IRLML5103TRPBF pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
