The IRLHS6376TRPBF from IR manufacturer is a FETs - Arrays with MOSFET 2N-CH 30V 3.6A 2X2 PQFN.
The IRLHS6376TRPBF is Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R MOSFET 30V 1 N-CH HEXFET 2.8nC. More details for IRLHS6376TRPBF can be seen below.
Details
Trans MOSFET N-CH 30V 3.6A 6-Pin PQFN EP T/R
MOSFET 30V 1 N-CH HEXFET 2.8nC
- Categories
- Other Components
- Manufacturer
- International Rectifier
- Veswin Part Number
- V2320-IRLHS6376TRPBF
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 01 - May 06 (Choose Expedited Shipping)
- EDA / CAD Models
- IRLHS6376TRPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 1.1V @ 10μA
- Vgs Gate Source Voltage
- 12 V
- Vds Drain Source Breakdown Voltage
- 30 V
- Transistor Type
- 2 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- 6-PQFN (2x2)
- Series
- HEXFETR
- Rds On Max Id Vgs
- 63 mOhm @ 3.4A, 4.5V
- Rds On Drain Source Resistance
- 63 mOhms
- Qg Gate Charge
- 2.8 nC
- Power Max
- 1.5W
- Pd Power Dissipation
- 1.5 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- 6-VDFN Exposed Pad
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 2 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Input Capacitance Ciss Vds
- 270pF @ 25V
- Id Continuous Drain Current
- 3.6 A
- Gate Charge Qg Vgs
- 2.8nC @ 4.5V
- FET Type
- 2 N-Channel (Dual)
- FET Feature
- Logic Level Gate
- Drain to Source Voltage Vdss
- 30V
- Current Continuous Drain Id 25°C
- 3.6A
- Configuration
- Dual
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- Q: IRLHS6376TRPBF Warranty?
- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the IRLHS6376TRPBF pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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