IRLD110PBF VISHAY/IR DIP-4 Transistors

IRLD110PBF
  • IRLD110PBF

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  • Part Number
  • IRLD110PBF
  • Brand
  • VISHAY IR
  • Product Categories
  • FETs - Single
  • Package
  • DIP-4
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The IRLD110PBF from VISHAY/IR manufacturer is a FETs - Single with Trans MOSFET N-CH 100V 1A. The IRLD110PBF is N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP MOSFET N-Chan 100V 1.0 Amp. More details for IRLD110PBF can be seen below.

Details

N-Channel 100V 1A (Ta) 1.3W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Trans MOSFET N-CH 100V 1A 4-Pin HVMDIP
MOSFET N-Chan 100V 1.0 Amp
Categories
Transistors
Manufacturer
VISHAY/IR
Veswin Part Number
V1070-IRLD110PBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
IRLD110PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
10 V
Vds Drain Source Breakdown Voltage
100 V
Typical Turn On Delay Time
9.3 ns
Typical Turn Off Delay Time
16 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
47 ns
Rds On Drain Source Resistance
540 Ohms
Pd Power Dissipation
1.3 W
Packaging
Tube
Package Case
HVMDIP-4
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
1 A
Fall Time
47 ns
Configuration
Single Dual Drain
Channel Mode
Enhancement

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the IRLD110PBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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