IRG4BC30WPBF IR TO-220AB Transistors

IR
  • IRG4BC30WPBF

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  • Part Number
  • IRG4BC30WPBF
  • Brand
  • IR
  • Product Categories
  • IGBTs - Single
  • Package
  • TO-220AB
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The IRG4BC30WPBF from IR manufacturer is a IGBTs - Single with INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A). The IRG4BC30WPBF is IGBT 600V 23A 100W Through Hole TO-220AB Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220AB Tube IGBT Transistors 600V Warp 60-150kHz. More details for IRG4BC30WPBF can be seen below.

Details

IGBT 600V 23A 100W Through Hole TO-220AB
Trans IGBT Chip N-CH 600V 23A 100000mW 3-Pin(3+Tab) TO-220AB Tube
IGBT Transistors 600V Warp 60-150kHz
Categories
Transistors
Manufacturer
International Rectifier
Veswin Part Number
V1070-IRG4BC30WPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 02 - May 07 (Choose Expedited Shipping)
EDA / CAD Models
IRG4BC30WPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
600V
Vce on Max Vge Ic
2.7V @ 15V, 12A
Unit Weight
0.211644 oz
Test Condition
480V, 12A, 23 Ohm, 15V
Td on off 25°C
25ns/99ns
Switching Energy
130μJ (on), 130μJ (off)
Supplier Device Package
TO-220AB
Reverse Recovery Time trr
-
Power Max
100W
Pd Power Dissipation
100 W
Packaging
Tube
Package Case
TO-220-3
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Gate Emitter Voltage
+/- 20 V
Input Type
Standard
IGBT Type
-
Gate Charge
51nC
Current Collector Pulsed Icm
92A
Current Collector Ic Max
23A
Continuous Collector Current at 25 C
23 A
Configuration
Single
Collector Emitter Voltage VCEO Max
600 V
Collector Emitter Saturation Voltage
2.7 V

IR Inventory

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  • A: We Provide 90 days warranty for our product.
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