The IRFR5410TRPBF from IR manufacturer is a FETs - Single with -100V Single P-Channel HEXFET Power MOSFET in a D-Pak package; Similar to IRFR5410TR with Lead Free Packaging on Tape and Reel.
The IRFR5410TRPBF is P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak Trans MOSFET P-CH 100V 13A 3-Pin(2+Tab) DPAK T/R MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC. More details for IRFR5410TRPBF can be seen below.
Details
P-Channel 100V 13A (Tc) 66W (Tc) Surface Mount D-Pak
Trans MOSFET P-CH 100V 13A 3-Pin(2+Tab) DPAK T/R
MOSFET 1 P-CH -100V HEXFET 26mOhms 70nC
- Categories
- MOS Field Effect Transistors
- Manufacturer
- International Rectifier
- Veswin Part Number
- V107110-IRFR5410TRPBF-
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 07 - May 12 (Choose Expedited Shipping)
- EDA / CAD Models
- IRFR5410TRPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 4V @ 250μA
- Vgs th Gate Source Threshold Voltage
- - 4 V
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- - 100 V
- Unit Weight
- 0.139332 oz
- Typical Turn On Delay Time
- 15 ns
- Typical Turn Off Delay Time
- 45 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- D-Pak
- Series
- HEXFETR
- Rise Time
- 58 ns
- Rds On Max Id Vgs
- 205 mOhm @ 7.8A, 10V
- Rds On Drain Source Resistance
- 205 mOhms
- Qg Gate Charge
- 38.7 nC
- Power Max
- 66W
- Pd Power Dissipation
- 66 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 760pF @ 25V
- Id Continuous Drain Current
- - 13 A
- Gate Charge Qg Vgs
- 58nC @ 10V
- Forward Transconductance Min
- 3.2 S
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 46 ns
- Drain to Source Voltage Vdss
- 100V
- Current Continuous Drain Id 25°C
- 13A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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- Q: IRFR5410TRPBF Warranty?
- A: We Provide 90 days warranty for our product.
- Q: IRFR5410TRPBF Technical Support?
-
A: Yes, Our product technical engineer will help you with the IRFR5410TRPBF pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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