IRFD9220PBF VISHAY/IR DIP-4 Transistors

IRFD9220PBF
  • IRFD9220PBF

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  • Part Number
  • IRFD9220PBF
  • Brand
  • VISHAY IR
  • Product Categories
  • FETs - Single
  • Package
  • DIP-4
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The IRFD9220PBF from VISHAY/IR manufacturer is a FETs - Single with P CHANNEL MOSFET, -200V, 560mA HD-1, Transistor Polarity:P Channel, Continuous Drain Current Id:-560mA, Drain Source Voltage Vds:-200V, On Resistance Rds(on):1.5ohm, Rds(on) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-4V. The IRFD9220PBF is P-Channel 200V 560mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP Trans MOSFET P-CH 200V 0.56A 4-Pin HVMDIP MOSFET P-Chan 200V 0.56 Amp. More details for IRFD9220PBF can be seen below.

Details

P-Channel 200V 560mA (Ta) 1W (Ta) Through Hole 4-DIP, Hexdip, HVMDIP
Trans MOSFET P-CH 200V 0.56A 4-Pin HVMDIP
MOSFET P-Chan 200V 0.56 Amp
Categories
Transistors
Manufacturer
VISHAY/IR
Veswin Part Number
V1070-IRFD9220PBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 09 - May 14 (Choose Expedited Shipping)
EDA / CAD Models
IRFD9220PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 200 V
Typical Turn On Delay Time
8.8 ns
Typical Turn Off Delay Time
7.3 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Rise Time
27 ns
Rds On Drain Source Resistance
1.5 Ohms
Pd Power Dissipation
1 W
Packaging
Tube
Package Case
HVMDIP-4
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
560 mA
Fall Time
27 ns
Configuration
Single Dual Drain
Channel Mode
Enhancement

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