The IRFB4110PBF from IR manufacturer is a FETs - Single with High Efficiency Synchronous Rectification in SMPS.
The IRFB4110PBF is N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg. More details for IRFB4110PBF can be seen below.
Details
N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg
- Categories
- MOS Field Effect Transistors
- Manufacturer
- International Rectifier
- Veswin Part Number
- V107110-IRFB4110PBF
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 04 - May 09 (Choose Expedited Shipping)
- EDA / CAD Models
- IRFB4110PBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 100 V
- Unit Weight
- 0.211644 oz
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Rds On Drain Source Resistance
- 3.7 mOhms
- Qg Gate Charge
- 150 nC
- Pd Power Dissipation
- 370 W
- Packaging
- Tube
- Package Case
- TO-220-3
- Number of Channels
- 1 Channel
- Mounting Style
- Through Hole
- Id Continuous Drain Current
- 180 A
- Configuration
- Single
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- Q: IRFB4110PBF Warranty?
- A: We Provide 90 days warranty for our product.
- Q: IRFB4110PBF Technical Support?
-
A: Yes, Our product technical engineer will help you with the IRFB4110PBF pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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