IRFB4110PBF IR TO-220AB MOS Field Effect Transistors

IR
  • IRFB4110PBF

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  • Part Number
  • IRFB4110PBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-220AB
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The IRFB4110PBF from IR manufacturer is a FETs - Single with High Efficiency Synchronous Rectification in SMPS. The IRFB4110PBF is N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg. More details for IRFB4110PBF can be seen below.

Details

N-Channel 100V 120A (Tc) 370W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH Si 100V 180A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 100V 180A 4.5mOhm 150nC Qg
Categories
MOS Field Effect Transistors
Manufacturer
International Rectifier
Veswin Part Number
V107110-IRFB4110PBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
IRFB4110PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
100 V
Unit Weight
0.211644 oz
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rds On Drain Source Resistance
3.7 mOhms
Qg Gate Charge
150 nC
Pd Power Dissipation
370 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Id Continuous Drain Current
180 A
Configuration
Single

IR Inventory

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