IRFB38N20DPBF IR TO-220AB MOS Field Effect Transistors

IR
  • IRFB38N20DPBF

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  • Part Number
  • IRFB38N20DPBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-220AB
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The IRFB38N20DPBF from IR manufacturer is a FETs - Single with TO-220AB,MOSFET, N, 200V, 44A. The IRFB38N20DPBF is N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB Trans MOSFET N-CH 200V 38A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 200V 44A 54mOhm 60nC. More details for IRFB38N20DPBF can be seen below.

Details

N-Channel 200V 43A (Tc) 3.8W (Ta), 300W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 200V 38A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 200V 44A 54mOhm 60nC
Categories
MOS Field Effect Transistors
Manufacturer
International Rectifier
Veswin Part Number
V107110-IRFB38N20DPBF-IR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
IRFB38N20DPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
30 V
Vds Drain Source Breakdown Voltage
200 V
Unit Weight
0.211644 oz
Typical Turn On Delay Time
16 ns
Typical Turn Off Delay Time
29 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
95 ns
Rds On Drain Source Resistance
54 mOhms
Qg Gate Charge
60 nC
Pd Power Dissipation
320 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Id Continuous Drain Current
44 A
Forward Transconductance Min
17 S
Fall Time
47 ns
Configuration
Single
Channel Mode
Enhancement

IR Inventory

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