IRFB31N20DPBF IR TO-220 Transistors

IR
  • IRFB31N20DPBF

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  • Part Number
  • IRFB31N20DPBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-220
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The IRFB31N20DPBF from IR manufacturer is a FETs - Single with MOSFET N-CH 200V 31A TO-220AB. The IRFB31N20DPBF is N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 200V 31A 82mOhm 70nC. More details for IRFB31N20DPBF can be seen below.

Details

N-Channel 200V 31A (Tc) 3.1W (Ta), 200W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 200V 31A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 200V 31A 82mOhm 70nC
Categories
Transistors
Manufacturer
International Rectifier
Veswin Part Number
V1070-IRFB31N20DPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
IRFB31N20DPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
5.5 V
Vgs Gate Source Voltage
30 V
Vds Drain Source Breakdown Voltage
200 V
Unit Weight
0.211644 oz
Typical Turn On Delay Time
16 ns
Typical Turn Off Delay Time
26 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
38 ns
Rds On Drain Source Resistance
82 mOhms
Qg Gate Charge
70 nC
Pd Power Dissipation
200 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Id Continuous Drain Current
31 A
Forward Transconductance Min
17 S
Fall Time
10 ns
Configuration
Single
Channel Mode
Enhancement

IR Inventory

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