IRF630NSPBF IR TO-263 Transistors

IR
  • IRF630NSPBF

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  • Part Number
  • IRF630NSPBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-263
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The IRF630NSPBF from IR manufacturer is a FETs - Single with HEXFET Power MOSFET. The IRF630NSPBF is Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC. More details for IRF630NSPBF can be seen below.

Details

Trans MOSFET N-CH Si 200V 9.3A 3-Pin(2+Tab) D2PAK Tube
MOSFET 200V 1 N-CH HEXFET 300mOhms 23.3nC
Categories
Transistors
Manufacturer
International Rectifier
Veswin Part Number
V1070-IRF630NSPBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 02 - May 07 (Choose Expedited Shipping)
EDA / CAD Models
IRF630NSPBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
200 V
Unit Weight
0.139332 oz
Typical Turn On Delay Time
7.9 ns
Typical Turn Off Delay Time
27 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
14 ns
Rds On Drain Source Resistance
300 mOhms
Qg Gate Charge
23.3 nC
Pd Power Dissipation
82 W
Packaging
Tube
Package Case
TO-252-3
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Id Continuous Drain Current
9.5 A
Fall Time
15 ns
Configuration
Single
Channel Mode
Enhancement

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  • Q: IRF630NSPBF Warranty?
  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the IRF630NSPBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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