IRF610PBF IR TO-220AB MOS Field Effect Transistors

IR
  • IRF610PBF

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  • Part Number
  • IRF610PBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-220AB
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The IRF610PBF from IR manufacturer is a FETs - Single with MOSFET N-CH 200V 3.3A TO-220AB,MOSFET N-Chan 200V 3.3 Amp. The IRF610PBF is N-Channel 200V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB MOSFET N-Chan 200V 3.3 Amp. More details for IRF610PBF can be seen below.

Details

N-Channel 200V 3.3A (Tc) 36W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH 200V 3.3A 3-Pin(3+Tab) TO-220AB
MOSFET N-Chan 200V 3.3 Amp
Categories
MOS Field Effect Transistors
Manufacturer
International Rectifier
Veswin Part Number
V107110-IRF610PBF
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 07 - May 12 (Choose Expedited Shipping)
EDA / CAD Models
IRF610PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
200 V
Unit Weight
0.211644 oz
Typical Turn On Delay Time
8.2 ns
Typical Turn Off Delay Time
14 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Rise Time
17 ns
Rds On Drain Source Resistance
1.5 Ohms
Pd Power Dissipation
36 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Id Continuous Drain Current
3.3 A
Fall Time
8.9 ns
Configuration
Single
Channel Mode
Enhancement

IR Inventory

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  • Q: IRF610PBF Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: IRF610PBF Technical Support?
  • A: Yes, Our product technical engineer will help you with the IRF610PBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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