IRF5305PBF IR TO-220AB MOS Field Effect Transistors

IR
  • IRF5305PBF

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  • Part Number
  • IRF5305PBF
  • Brand
  • IR
  • Product Categories
  • FETs - Single
  • Package
  • TO-220AB
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The IRF5305PBF from IR manufacturer is a FETs - Single with Mosfet p-ch 55v 31a to-220ab. The IRF5305PBF is P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT PCh -55V -31A 60mOhm 42nC. More details for IRF5305PBF can be seen below.

Details

P-Channel 55V 31A (Tc) 110W (Tc) Through Hole TO-220AB
Trans MOSFET P-CH Si 55V 31A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT PCh -55V -31A 60mOhm 42nC
Categories
MOS Field Effect Transistors
Manufacturer
International Rectifier
Veswin Part Number
V107110-IRF5305PBF-IR
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
IRF5305PBF by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Gate Source Threshold Voltage
- 4 V
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
- 55 V
Unit Weight
0.211644 oz
Typical Turn On Delay Time
14 ns
Typical Turn Off Delay Time
39 ns
Transistor Type
1 P-Channel
Transistor Polarity
P-Channel
Technology
Si
Rise Time
66 ns
Rds On Drain Source Resistance
60 mOhms
Qg Gate Charge
42 nC
Pd Power Dissipation
110 W
Packaging
Tube
Package Case
TO-220-3
Number of Channels
1 Channel
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Id Continuous Drain Current
- 31 A
Forward Transconductance Min
8 S
Fall Time
63 ns
Configuration
Single

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  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the IRF5305PBF pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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