The IRF1010NPBF from IR manufacturer is a FETs - Single with HEXFET Power MOSFET.
The IRF1010NPBF is N-Channel 55V 85A (Tc) 180W (Tc) Through Hole TO-220AB Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube MOSFET MOSFT 55V 72A 11mOhm 80nC. More details for IRF1010NPBF can be seen below.
Details
N-Channel 55V 85A (Tc) 180W (Tc) Through Hole TO-220AB
Trans MOSFET N-CH Si 55V 85A 3-Pin(3+Tab) TO-220AB Tube
MOSFET MOSFT 55V 72A 11mOhm 80nC
- Categories
- Transistors
- Manufacturer
- International Rectifier
- Veswin Part Number
- V1070-IRF1010NPBF
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 01 - May 06 (Choose Expedited Shipping)
- EDA / CAD Models
- IRF1010NPBF by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 55 V
- Unit Weight
- 0.211644 oz
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Rds On Drain Source Resistance
- 11 mOhms
- Qg Gate Charge
- 80 nC
- Pd Power Dissipation
- 130 W
- Packaging
- Tube
- Package Case
- TO-220-3
- Number of Channels
- 1 Channel
- Mounting Style
- Through Hole
- Id Continuous Drain Current
- 72 A
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- Q: IRF1010NPBF Warranty?
- A: We Provide 90 days warranty for our product.
- Q: IRF1010NPBF Technical Support?
-
A: Yes, Our product technical engineer will help you with the IRF1010NPBF pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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