The IPD30N08S2L-21 from INFINEON manufacturer is a FETs - Single with MOSFET OPTIMOS PWR-TRANS N-CH 75V30A 20.5mOhm.
The IPD30N08S2L-21 is MOSFET N-Ch 75V 30A DPAK-2 OptiMOS. More details for IPD30N08S2L-21 can be seen below.
Details
MOSFET N-Ch 75V 30A DPAK-2 OptiMOS
- Categories
- Transistors
- Manufacturer
- Infineon Technologies AG
- Veswin Part Number
- V1070-IPD30N08S2L-21
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 04 - May 09 (Choose Expedited Shipping)
- EDA / CAD Models
- IPD30N08S2L-21 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 75 V
- Unit Weight
- 0.139332 oz
- Typical Turn On Delay Time
- 9 ns
- Typical Turn Off Delay Time
- 44 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Tradename
- OptiMOS
- Technology
- Si
- Series
- OptiMOS
- Rise Time
- 30 ns
- Rds On Drain Source Resistance
- 20.5 mOhms
- Pd Power Dissipation
- 136 W
- Part Aliases
- IPD30N08S2L21ATMA1 IPD30N08S2L21XT SP000252170
- Packaging
- Reel
- Package Case
- TO-252-3
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Id Continuous Drain Current
- 30 A
- Fall Time
- 11 ns
- Configuration
- Single
- Channel Mode
- Enhancement
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- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the IPD30N08S2L-21 pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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