The FQD13N10LTM from FREESCALE manufacturer is a FETs - Single with 100V N-Channel Logic Level QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel,MOSFET 100V N-Ch QFET Logic Level.
The FQD13N10LTM is N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R MOSFET 100V N-Ch QFET Logic Level. More details for FQD13N10LTM can be seen below.
Details
N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R
MOSFET 100V N-Ch QFET Logic Level
- Categories
- MOS Field Effect Transistors
- Manufacturer
- Freescale / NXP
- Veswin Part Number
- V107110-FQD13N10LTM-FREESCALE
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 01 - May 06 (Choose Expedited Shipping)
- EDA / CAD Models
- FQD13N10LTM by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 100 V
- Unit Weight
- 0.009184 oz
- Typical Turn On Delay Time
- 7.5 ns
- Typical Turn Off Delay Time
- 22 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- TO-252-3
- Series
- QFETR
- Rise Time
- 220 ns
- Rds On Max Id Vgs
- 180 mOhm @ 5A, 10V
- Rds On Drain Source Resistance
- 180 mOhms
- Power Max
- 2.5W
- Pd Power Dissipation
- 2.5 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 520pF @ 25V
- Id Continuous Drain Current
- 10 A
- Gate Charge Qg Vgs
- 12nC @ 5V
- Forward Transconductance Min
- 8.7 S
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Fall Time
- 72 ns
- Drain to Source Voltage Vdss
- 100V
- Current Continuous Drain Id 25°C
- 10A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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Veswin is an electronic component distributor for commodity, common, obsolete / hard to find electronic components. Veswin supplies Industrial,
Commercial and Mil-Spec components to OEM customers, CEM customers and Repair Centers worldwide. We maintain a large inventory of electronic components,
which may include FQD13N10LTM, on hand to ship same day or short lead-time. Veswin Company is a full service FQD13N10LTM supplier and distributor for FQD13N10LTM.
We have the ability to source and provide the FQD13N10LTM globally to assist you with your electronic component supply chain. now!
- Q: How To Order FQD13N10LTM?
- A: Please click on the "Add to Cart" Button and then proceed to checkout.
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- A: We accept T/T(Bank wire), Paypal, Credit card Payment through PayPal.
- Q: How Long Can I Get The FQD13N10LTM?
-
A: We will ship via FedEx or DHL or UPS, Normally will take 4 or 5 days to arrive at your office.
We can also ship via registered airmail, Normally will take 14-38 days to arrive at your office.
Please choose your preferred shipping method when checking out on our website.
- Q: FQD13N10LTM Warranty?
- A: We Provide 90 days warranty for our product.
- Q: FQD13N10LTM Technical Support?
-
A: Yes, Our product technical engineer will help you with the FQD13N10LTM pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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