FQD13N10LTM FREESCALE TO-252 MOS Field Effect Transistors

FREESCALE
  • FQD13N10LTM

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  • Part Number
  • FQD13N10LTM
  • Product Categories
  • FETs - Single
  • Package
  • TO-252
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The FQD13N10LTM from FREESCALE manufacturer is a FETs - Single with 100V N-Channel Logic Level QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel,MOSFET 100V N-Ch QFET Logic Level. The FQD13N10LTM is N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R MOSFET 100V N-Ch QFET Logic Level. More details for FQD13N10LTM can be seen below.

Details

N-Channel 100V 10A (Tc) 2.5W (Ta), 40W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH 100V 10A 3-Pin(2+Tab) DPAK T/R
MOSFET 100V N-Ch QFET Logic Level
Categories
MOS Field Effect Transistors
Manufacturer
Freescale / NXP
Veswin Part Number
V107110-FQD13N10LTM-FREESCALE
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 01 - May 06 (Choose Expedited Shipping)
EDA / CAD Models
FQD13N10LTM by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
100 V
Unit Weight
0.009184 oz
Typical Turn On Delay Time
7.5 ns
Typical Turn Off Delay Time
22 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
TO-252-3
Series
QFETR
Rise Time
220 ns
Rds On Max Id Vgs
180 mOhm @ 5A, 10V
Rds On Drain Source Resistance
180 mOhms
Power Max
2.5W
Pd Power Dissipation
2.5 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
520pF @ 25V
Id Continuous Drain Current
10 A
Gate Charge Qg Vgs
12nC @ 5V
Forward Transconductance Min
8.7 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Logic Level Gate
Fall Time
72 ns
Drain to Source Voltage Vdss
100V
Current Continuous Drain Id 25°C
10A (Tc)
Configuration
Single
Channel Mode
Enhancement

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Looking for FQD13N10LTM? Welcome to Veswin.com, Our Sales are here to help you. You can get components availability and pricing for FQD13N10LTM, view detailed information that including FQD13N10LTM manufacturer and datasheets. You can buy or learn about FQD13N10LTM right here, right now. Veswin is an electronic component distributor for commodity, common, obsolete / hard to find electronic components. Veswin supplies Industrial, Commercial and Mil-Spec components to OEM customers, CEM customers and Repair Centers worldwide. We maintain a large inventory of electronic components, which may include FQD13N10LTM, on hand to ship same day or short lead-time. Veswin Company is a full service FQD13N10LTM supplier and distributor for FQD13N10LTM. We have the ability to source and provide the FQD13N10LTM globally to assist you with your electronic component supply chain. now!
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  • Q: FQD13N10LTM Warranty?
  • A: We Provide 90 days warranty for our product.
  • Q: FQD13N10LTM Technical Support?
  • A: Yes, Our product technical engineer will help you with the FQD13N10LTM pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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