The FQD13N06LTM from FAIRCHILD manufacturer is a FETs - Single with 60V N-Channel Logic level QFET; Package: TO-252(DPAK); No of Pins: 2; Container: Tape & Reel,MOSFET 60V N-Channel QFET Logic Level.
The FQD13N06LTM is N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R MOSFET 60V N-Channel QFET Logic Level. More details for FQD13N06LTM can be seen below.
Details
N-Channel 60V 11A (Tc) 2.5W (Ta), 28W (Tc) Surface Mount D-Pak
Trans MOSFET N-CH 60V 11A 3-Pin(2+Tab) DPAK T/R
MOSFET 60V N-Channel QFET Logic Level
- Categories
- Transistors
- Manufacturer
- Fairchild Semiconductor
- Veswin Part Number
- V1070-FQD13N06LTM
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 01 - May 06 (Choose Expedited Shipping)
- EDA / CAD Models
- FQD13N06LTM by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.5V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 60 V
- Unit Weight
- 0.009184 oz
- Typical Turn On Delay Time
- 8 ns
- Typical Turn Off Delay Time
- 20 ns
- Transistor Type
- 1 N-Channel
- Transistor Polarity
- N-Channel
- Technology
- Si
- Supplier Device Package
- TO-252-3
- Series
- QFETR
- Rise Time
- 90 ns
- Rds On Max Id Vgs
- 115 mOhm @ 5.5A, 10V
- Rds On Drain Source Resistance
- 115 mOhms
- Power Max
- 2.5W
- Pd Power Dissipation
- 2.5 W
- Part Aliases
- FQD13N06LTM_NL
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-252-3, DPak (2 Leads + Tab), SC-63
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 350pF @ 25V
- Id Continuous Drain Current
- 11 A
- Gate Charge Qg Vgs
- 6.4nC @ 5V
- Forward Transconductance Min
- 6 S
- FET Type
- MOSFET N-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Fall Time
- 40 ns
- Drain to Source Voltage Vdss
- 60V
- Current Continuous Drain Id 25°C
- 11A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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- Q: FQD13N06LTM Warranty?
- A: We Provide 90 days warranty for our product.
- Q: FQD13N06LTM Technical Support?
-
A: Yes, Our product technical engineer will help you with the FQD13N06LTM pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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