The FQB34P10TM from FAIRCHILD manufacturer is a FETs - Single with 100V P-Channel QFET; Package: TO-263(D2PAK); No of Pins: 2; Container: Tape & Reel,MOSFET 100V P-Channel QFET.
The FQB34P10TM is P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D?PAK (TO-263AB) Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R MOSFET 100V P-Channel QFET. More details for FQB34P10TM can be seen below.
Details
P-Channel 100V 33.5A (Tc) 3.75W (Ta), 155W (Tc) Surface Mount D?PAK (TO-263AB)
Trans MOSFET P-CH 100V 33.5A 3-Pin(2+Tab) D2PAK T/R
MOSFET 100V P-Channel QFET
- Categories
- Transistors
- Manufacturer
- Fairchild Semiconductor
- Veswin Part Number
- V1070-FQB34P10TM
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 07 - May 12 (Choose Expedited Shipping)
- EDA / CAD Models
- FQB34P10TM by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 4V @ 250μA
- Vgs Gate Source Voltage
- 25 V
- Vds Drain Source Breakdown Voltage
- - 100 V
- Unit Weight
- 0.046296 oz
- Typical Turn On Delay Time
- 25 ns
- Typical Turn Off Delay Time
- 160 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- TO-263-2
- Series
- QFETR
- Rise Time
- 250 ns
- Rds On Max Id Vgs
- 60 mOhm @ 16.75A, 10V
- Rds On Drain Source Resistance
- 60 mOhms
- Power Max
- 3.75W
- Pd Power Dissipation
- 3.75 W
- Part Aliases
- FQB34P10TM_NL
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Operating Temperature
- -55°C ~ 175°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 175 C
- Input Capacitance Ciss Vds
- 2910pF @ 25V
- Id Continuous Drain Current
- - 33.5 A
- Gate Charge Qg Vgs
- 110nC @ 10V
- Forward Transconductance Min
- 23 S
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Standard
- Fall Time
- 210 ns
- Drain to Source Voltage Vdss
- 100V
- Current Continuous Drain Id 25°C
- 33.5A (Tc)
- Configuration
- Single
- Channel Mode
- Enhancement
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- Q: FQB34P10TM Warranty?
- A: We Provide 90 days warranty for our product.
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-
A: Yes, Our product technical engineer will help you with the FQB34P10TM pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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