FGA15N120ANTDTU_F109 FAIRCHILD TO3P MOS Field Effect Transistors

FAIRCHILD
  • FGA15N120ANTDTU_F109

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  • Part Number
  • FGA15N120ANTDTU_F109
  • Product Categories
  • IGBTs - Single
  • Package
  • TO3P
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The FGA15N120ANTDTU_F109 from FAIRCHILD manufacturer is a IGBTs - Single with IGBT 1200V 30A 186W TO3P. The FGA15N120ANTDTU_F109 is IGBT Transistors 1200V NPT Trench. More details for FGA15N120ANTDTU_F109 can be seen below.

Details

IGBT Transistors 1200V NPT Trench
Categories
MOS Field Effect Transistors
Manufacturer
Fairchild Semiconductor
Veswin Part Number
V107110-FGA15N120ANTDTU_F109
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 10 - May 15 (Choose Expedited Shipping)
EDA / CAD Models
FGA15N120ANTDTU_F109 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
1200V
Vce on Max Vge Ic
2.4V @ 15V, 15A
Unit Weight
0.225789 oz
Test Condition
600V, 15A, 10 Ohm, 15V
Td on off 25°C
15ns/160ns
Switching Energy
3mJ (on), 600μJ (off)
Supplier Device Package
TO-3PN
Reverse Recovery Time trr
330ns
Power Max
186W
Packaging
Tube
Package Case
TO-3P-3, SC-65-3
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Input Type
Standard
IGBT Type
NPT and Trench
Gate Charge
120nC
Current Collector Pulsed Icm
45A
Current Collector Ic Max
30A
Continuous Collector Current Ic Max
24 A
Configuration
Single
Collector Emitter Voltage VCEO Max
1200 V

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FAIRCHILD Original Stock

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  • A: We Provide 90 days warranty for our product.
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FAIRCHILD Obsolete Part

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