FDG6321C ON SOT-363 Transistors

ON
  • FDG6321C

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  • Part Number
  • FDG6321C
  • Brand
  • ON
  • Product Categories
  • FETs - Arrays
  • Package
  • SOT-363
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The FDG6321C from ON manufacturer is a FETs - Arrays with DUAL N/P CHANNEL MOSFET, 25V, Transistor Polarity:N and P Channel, Continuous Drain Current Id:500mA, Drain Source Voltage Vds:25V, On Resistance Rds(on):450mohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:800mV. The FDG6321C is Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-70-6 Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-70 T/R MOSFET SC70-6 COMP N-P-CH. More details for FDG6321C can be seen below.

Details

Mosfet Array N and P-Channel 25V 500mA, 410mA 300mW Surface Mount SC-70-6
Trans MOSFET N/P-CH 25V 0.5A/0.41A 6-Pin SC-70 T/R
MOSFET SC70-6 COMP N-P-CH
Categories
Transistors
Manufacturer
Fairchild Semiconductor
Veswin Part Number
V1070-FDG6321C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 07 - May 12 (Choose Expedited Shipping)
EDA / CAD Models
FDG6321C by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
1.5V @ 250μA
Vgs Gate Source Voltage
8 V
Vds Drain Source Breakdown Voltage
25 V
Unit Weight
0.000988 oz
Typical Turn On Delay Time
3 ns 7 ns
Typical Turn Off Delay Time
17 ns 55 ns
Transistor Type
1 N-Channel 1 P-Channel
Transistor Polarity
N-Channel P-Channel
Technology
Si
Supplier Device Package
SC-70-6
Rise Time
8.5 ns 8 ns
Rds On Max Id Vgs
450 mOhm @ 500mA, 4.5V
Rds On Drain Source Resistance
450 mOhms
Power Max
300mW
Pd Power Dissipation
300 mW
Part Aliases
FDG6321C_NL
Packaging
Digi-ReelR Alternate Packaging
Package Case
6-TSSOP, SC-88, SOT-363
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
50pF @ 10V
Id Continuous Drain Current
500 mA - 410 mA
Gate Charge Qg Vgs
2.3nC @ 4.5V
Forward Transconductance Min
1.45 S 0.9 S
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Fall Time
8.5 ns 8 ns
Drain to Source Voltage Vdss
25V
Current Continuous Drain Id 25°C
500mA, 410mA
Configuration
N-Channel P-Channel
Channel Mode
Enhancement

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  • Q: FDG6321C Warranty?
  • A: We Provide 90 days warranty for our product.
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  • A: Yes, Our product technical engineer will help you with the FDG6321C pinout information, application notes, replacement, datasheet in pdf, manual, schematic, equivalent, cross reference.

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