CSD87330Q3D TI SON-8 Power Supply Battery

TI
  • CSD87330Q3D

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  • Part Number
  • CSD87330Q3D
  • Brand
  • TI
  • Product Categories
  • FETs - Arrays
  • Package
  • SON-8
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The CSD87330Q3D from TI manufacturer is a FETs - Arrays with 30V Synchronous Buck NexFET Power Block. The CSD87330Q3D is Mosfet Array 2 N-Channel (Half Bridge) 30V 20A 6W Surface Mount 8-LSON (3.3x3.3) Synchronous Buck NexFET Power Block 8-Pin LSON-CLIP EP T/R MOSFET 30V Sync Buck NexFET Power Block. More details for CSD87330Q3D can be seen below.

Details

Mosfet Array 2 N-Channel (Half Bridge) 30V 20A 6W Surface Mount 8-LSON (3.3x3.3)
Synchronous Buck NexFET Power Block 8-Pin LSON-CLIP EP T/R
MOSFET 30V Sync Buck NexFET Power Block
Categories
Power Supply Battery
Manufacturer
Texas Instruments
Veswin Part Number
V1760-CSD87330Q3D
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 04 - May 09 (Choose Expedited Shipping)
EDA / CAD Models
CSD87330Q3D by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2.1V @ 250μA
Vgs Gate Source Voltage
10 V
Vds Drain Source Breakdown Voltage
30 V 30 V
Typical Turn On Delay Time
4.5 ns 4.5 ns
Typical Turn Off Delay Time
9.4 ns 9.1 ns
Transistor Type
2 N-Channel
Transistor Polarity
N-Channel
Tradename
NexFET
Technology
Si
Supplier Device Package
8-LSON (3.3x3.3)
Series
NexFET?
Rise Time
6.8 ns 7.5 ns
Rds On Max Id Vgs
-
Rds On Drain Source Resistance
9.45 mOhms 3.6 mOhms
Qg Gate Charge
4.8 nC 9.6 nC
Power Max
6W
Pd Power Dissipation
6 W
Packaging
Digi-ReelR Alternate Packaging
Package Case
8-PowerLDFN
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
2 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
900pF @ 15V
Id Continuous Drain Current
20 A 20 A
Gate Charge Qg Vgs
5.8nC @ 4.5V
Forward Transconductance Min
76 S / 51 S
FET Type
2 N-Channel (Half Bridge)
FET Feature
Logic Level Gate
Fall Time
1.7 ns 1.6 ns
Drain to Source Voltage Vdss
30V
Current Continuous Drain Id 25°C
20A
Configuration
Dual

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