The BSM180D12P2C101 from ROHM manufacturer is a FETs - Arrays with MOSFET 2N-CH 1200V 180A MODULE.
The BSM180D12P2C101 is Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 180A 1130W Module Discrete Semiconductor Modules Mod: 1200V 180A (no Diode). More details for BSM180D12P2C101 can be seen below.
Details
Mosfet Array 2 N-Channel (Half Bridge) 1200V (1.2kV) 180A 1130W Module
Discrete Semiconductor Modules Mod: 1200V 180A (no Diode)
- Categories
- Modules
- Manufacturer
- ROHM Semiconductor
- Veswin Part Number
- V107225-BSM180D12P2C101
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 03 - May 08 (Choose Expedited Shipping)
- EDA / CAD Models
- BSM180D12P2C101 by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 4V @ 35.2mA
- Type
- SiC Power Module
- Supplier Device Package
- Module
- Series
- BSM180D12P2C101
- Rds On Max Id Vgs
- -
- Product
- Power Semiconductor Modules
- Power Max
- 1130W
- Packaging
- Bulk
- Package Case
- Module
- Operating Temperature Range
- - 40 C to + 150 C
- Operating Temperature
- -40°C ~ 150°C (TJ)
- Mounting Style
- Screw
- Mounting Type
- *
- Input Capacitance Ciss Vds
- 23000pF @ 10V
- Gate Charge Qg Vgs
- -
- FET Type
- 2 N-Channel (Half Bridge)
- FET Feature
- Standard
- Drain to Source Voltage Vdss
- 1200V (1.2kV)
- Current Continuous Drain Id 25°C
- 180A
- Configuration
- Half-Bridge
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- A: We Provide 90 days warranty for our product.
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A: Yes, Our product technical engineer will help you with the BSM180D12P2C101 pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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