APT75GP120J MICROSEMI/APT SOT-227 Transistors

APT75GP120J
  • APT75GP120J

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  • Part Number
  • APT75GP120J
  • Brand
  • MICROSEMI APT
  • Product Categories
  • Module
  • Package
  • SOT-227
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The APT75GP120J from MICROSEMI/APT manufacturer is a Module with IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single. The APT75GP120J is IGBT Module PT Single 1200V 128A 543W Chassis Mount ISOTOP? IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single. More details for APT75GP120J can be seen below.

Details

IGBT Module PT Single 1200V 128A 543W Chassis Mount ISOTOP?
IGBT Modules Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
Categories
Transistors
Manufacturer
MICROSEMI/APT
Veswin Part Number
V1070-APT75GP120J
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 13 - May 18 (Choose Expedited Shipping)
EDA / CAD Models
APT75GP120J by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
1200V
Vce on Max Vge Ic
3.9V @ 15V, 75A
Unit Weight
1.058219 oz
Tradename
POWER MOS 7 IGBT ISOTOP
Supplier Device Package
ISOTOPR
Series
POWER MOS 7R
Product
IGBT Silicon Modules
Power Max
543W
Pd Power Dissipation
543 W
Packaging
Bulk
Package Case
ISOTOP
NTC Thermistor
No
Mounting Style
Screw
Mounting Type
Chassis Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
+/- 20 V
Input Capacitance Cies Vce
7.04nF @ 25V
Input
Standard
IGBT Type
PT
Gate Emitter Leakage Current
100 nA
Current Collector Ic Max
128A
Current Collector Cutoff Max
1mA
Continuous Collector Current at 25 C
128 A
Configuration
Single
Collector Emitter Voltage VCEO Max
1.2 kV
Collector Emitter Saturation Voltage
3.3 V

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