APT45GP120BG APT/ MICROSEMI TO-247 Transistors

APT45GP120BG
  • APT45GP120BG

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  • Part Number
  • APT45GP120BG
  • Brand
  • APT MICROSEMI
  • Product Categories
  • IGBTs - Single
  • Package
  • TO-247
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The APT45GP120BG from APT/ MICROSEMI manufacturer is a IGBTs - Single with IGBT 1200V 100A 625W TO247. The APT45GP120BG is IGBT PT 1200V 100A 625W Through Hole TO-247 [B] IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single. More details for APT45GP120BG can be seen below.

Details

IGBT PT 1200V 100A 625W Through Hole TO-247 [B]
IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Single
Categories
Transistors
Manufacturer
APT/ MICROSEMI
Veswin Part Number
V1070-APT45GP120BG
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 02 - May 07 (Choose Expedited Shipping)
EDA / CAD Models
APT45GP120BG by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
1200V
Vce on Max Vge Ic
3.9V @ 15V, 45A
Unit Weight
1.340411 oz
Tradename
POWER MOS 7 IGBT
Test Condition
600V, 45A, 5 Ohm, 15V
Td on off 25°C
18ns/102ns
Switching Energy
900μJ (on), 904μJ (off)
Supplier Device Package
TO-247 [B]
Series
POWER MOS 7R
Reverse Recovery Time trr
-
Power Max
625W
Pd Power Dissipation
625 W
Packaging
Tube
Package Case
TO-247-3
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Maximum Gate Emitter Voltage
30 V
Input Type
Standard
IGBT Type
PT
Gate Emitter Leakage Current
100 nA
Gate Charge
185nC
Current Collector Pulsed Icm
170A
Current Collector Ic Max
100A
Continuous Collector Current Ic Max
100 A
Continuous Collector Current at 25 C
100 A
Configuration
Single
Collector Emitter Voltage VCEO Max
1.2 kV
Collector Emitter Saturation Voltage
3.3 V

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