The APT25GP90BDQ1G from APT manufacturer is a Module with POWER MOS 7 IGBT.
The APT25GP90BDQ1G is IGBT PT 900V 72A 417W Through Hole TO-247 [B] Trans IGBT Chip N-CH 900V 72A 417000mW 3-Pin(3+Tab) TO-247 IGBT Transistors Insulated Gate Bipolar Transistor - PT Power MOS 7 - Combi. More details for APT25GP90BDQ1G can be seen below.
- Categories
- Transistors
- Manufacturer
- APT
- Veswin Part Number
- V1070-APT25GP90BDQ1G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 02 - May 07 (Choose Expedited Shipping)
- EDA / CAD Models
- APT25GP90BDQ1G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
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Commercial and Mil-Spec components to OEM customers, CEM customers and Repair Centers worldwide. We maintain a large inventory of electronic components,
which may include APT25GP90BDQ1G, on hand to ship same day or short lead-time. Veswin Company is a full service APT25GP90BDQ1G supplier and distributor for APT25GP90BDQ1G.
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-
A: We will ship via FedEx or DHL or UPS, Normally will take 4 or 5 days to arrive at your office.
We can also ship via registered airmail, Normally will take 14-38 days to arrive at your office.
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- Q: APT25GP90BDQ1G Warranty?
- A: We Provide 90 days warranty for our product.
- Q: APT25GP90BDQ1G Technical Support?
-
A: Yes, Our product technical engineer will help you with the APT25GP90BDQ1G pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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