APT200GN60JDQ4 MICROSEMI/APT SOT-227 Transistors

APT200GN60JDQ4
  • APT200GN60JDQ4

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  • Part Number
  • APT200GN60JDQ4
  • Brand
  • MICROSEMI APT
  • Product Categories
  • Module
  • Package
  • SOT-227
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The APT200GN60JDQ4 from MICROSEMI/APT manufacturer is a Module with Insulated Gate Bipolar Transistor-Trench Fieldstop Low Frequency . The APT200GN60JDQ4 is IGBT Module Trench Field Stop Single 600V 283A 682W Chassis Mount ISOTOP? Trans IGBT Chip N-CH 600V 283A 682000mW 4-Pin SOT-227 IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi. More details for APT200GN60JDQ4 can be seen below.

Details

IGBT Module Trench Field Stop Single 600V 283A 682W Chassis Mount ISOTOP?
Trans IGBT Chip N-CH 600V 283A 682000mW 4-Pin SOT-227
IGBT Modules Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
Categories
Transistors
Manufacturer
MICROSEMI/APT
Veswin Part Number
V1070-APT200GN60JDQ4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 15 - May 20 (Choose Expedited Shipping)
EDA / CAD Models
APT200GN60JDQ4 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
600V
Vce on Max Vge Ic
1.85V @ 15V, 200A
Unit Weight
1.058219 oz
Tradename
ISOTOP
Supplier Device Package
ISOTOPR
Product
IGBT Silicon Modules
Power Max
682W
Pd Power Dissipation
682 W
Packaging
Bulk
Package Case
ISOTOP
NTC Thermistor
No
Mounting Style
Screw
Mounting Type
Chassis Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Maximum Gate Emitter Voltage
+/- 20 V
Input Capacitance Cies Vce
14.1nF @ 25V
Input
Standard
IGBT Type
Trench Field Stop
Gate Emitter Leakage Current
600 nA
Current Collector Ic Max
283A
Current Collector Cutoff Max
50μA
Continuous Collector Current at 25 C
283 A
Configuration
Single
Collector Emitter Voltage VCEO Max
600 V
Collector Emitter Saturation Voltage
1.5 V

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