APT100GN60LDQ4G APTMICROS/MICROSEMI TO-264 Transistors

APT100GN60LDQ4G
  • APT100GN60LDQ4G

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  • Part Number
  • APT100GN60LDQ4G
  • Brand
  • APTMICROS MICROSEMI
  • Product Categories
  • IGBTs - Single
  • Package
  • TO-264
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The APT100GN60LDQ4G from APTMICROS/MICROSEMI manufacturer is a IGBTs - Single with IGBT 600V 229A 625W. The APT100GN60LDQ4G is IGBT Trench Field Stop 600V 229A 625W Through Hole TO-264 [L] IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi. More details for APT100GN60LDQ4G can be seen below.

Details

IGBT Trench Field Stop 600V 229A 625W Through Hole TO-264 [L]
IGBT Transistors Insulated Gate Bipolar Transistor - Fieldstop Low Freq - Combi
Categories
Transistors
Manufacturer
APTMICROS/MICROSEMI
Veswin Part Number
V1070-APT100GN60LDQ4G
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
APT100GN60LDQ4G by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
600V
Vce on Max Vge Ic
1.85V @ 15V, 100A
Unit Weight
0.373904 oz
Test Condition
400V, 100A, 1 Ohm, 15V
Td on off 25°C
31ns/310ns
Switching Energy
4.75mJ (on), 2.675mJ (off)
Supplier Device Package
TO-264 [L]
Reverse Recovery Time trr
-
Power Max
625W
Pd Power Dissipation
625 W
Packaging
Tube
Package Case
TO-264-3, TO-264AA
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 175 C
Maximum Gate Emitter Voltage
30 V
Input Type
Standard
IGBT Type
Trench Field Stop
Gate Emitter Leakage Current
600 nA
Gate Charge
600nC
Current Collector Pulsed Icm
300A
Current Collector Ic Max
229A
Continuous Collector Current Ic Max
229 A
Continuous Collector Current at 25 C
229 A
Configuration
Single
Collector Emitter Voltage VCEO Max
600 V
Collector Emitter Saturation Voltage
1.5 V

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