2SC5707-E ON/SANYO TO-251 Transistors

2SC5707-E
  • 2SC5707-E

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  • Part Number
  • 2SC5707-E
  • Brand
  • ON SANYO
  • Product Categories
  • Transistors (BJT) - Single
  • Package
  • TO-251
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The 2SC5707-E from ON/SANYO manufacturer is a Transistors (BJT) - Single with Transistors Bipolar - BJT BIP NPN 8A 50V. The 2SC5707-E is Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP Trans GP BJT NPN 50V 8A 1000mW 3-Pin(3+Tab) TP Bag Bipolar Transistors - BJT BIP NPN 8A 50V. More details for 2SC5707-E can be seen below.

Details

Bipolar (BJT) Transistor NPN 50V 8A 330MHz 1W Through Hole TP
Trans GP BJT NPN 50V 8A 1000mW 3-Pin(3+Tab) TP Bag
Bipolar Transistors - BJT BIP NPN 8A 50V
Categories
Transistors
Manufacturer
ON/SANYO
Veswin Part Number
V1070-2SC5707-E
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 07 - May 12 (Choose Expedited Shipping)
EDA / CAD Models
2SC5707-E by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
50V
Vce Saturation Max Ib Ic
240mV @ 175mA, 3.5A
Unit Weight
0.139332 oz
Transistor Type
NPN
Transistor Polarity
NPN
Supplier Device Package
TP
Series
2SC5707
Power Max
1W
Pd Power Dissipation
15 W
Packaging
Bulk
Package Case
TO-251-3 Short Leads, IPak, TO-251AA
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Maximum DC Collector Current
11 A
Gain Bandwidth Product fT
330 MHz
Frequency Transition
330MHz
Emitter Base Voltage VEBO
6 V
DC Current Gain hFE Min Ic Vce
200 @ 500mA, 2V
DC Collector Base Gain hfe Min
200
Current Collector Ic Max
8A
Current Collector Cutoff Max
100nA (ICBO)
Continuous Collector Current
8 A
Configuration
Single
Collector Emitter Voltage VCEO Max
50 V
Collector Emitter Saturation Voltage
160 mV 110 mV
Collector Base Voltage VCBO
100 V

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