2N7002T LRC SOT-523 MOS Field Effect Transistors

LRC
  • 2N7002T

Images are for reference. See Product Specification

  • Part Number
  • 2N7002T
  • Product Categories
  • FETs - Single
  • Package
  • SOT-523
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The 2N7002T from LRC manufacturer is a FETs - Single with Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523F T/R. The 2N7002T is N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-523F Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523F T/R MOSFET N-Chan Enhancement Mode Field Effect. More details for 2N7002T can be seen below.

Details

N-Channel 60V 115mA (Ta) 200mW (Ta) Surface Mount SOT-523F
Trans MOSFET N-CH 60V 0.115A 3-Pin SOT-523F T/R
MOSFET N-Chan Enhancement Mode Field Effect
Categories
MOS Field Effect Transistors
Manufacturer
LRC
Veswin Part Number
V107110-2N7002T-LRC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 08 - May 13 (Choose Expedited Shipping)
EDA / CAD Models
2N7002T by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
2V @ 250μA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
60 V
Unit Weight
0.001058 oz
Typical Turn On Delay Time
5.85 ns
Typical Turn Off Delay Time
12.5 ns
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
SOT-523F
Rds On Max Id Vgs
7.5 Ohm @ 50mA, 5V
Rds On Drain Source Resistance
7.5 Ohms
Power Max
200mW
Pd Power Dissipation
200 mW
Packaging
Digi-ReelR Alternate Packaging
Package Case
SC-89, SOT-490
Operating Temperature
150°C (TJ)
Number of Channels
1 Channel
Mounting Style
SMD/SMT
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
50pF @ 25V
Id Continuous Drain Current
115 mA
Gate Charge Qg Vgs
-
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage Vdss
60V
Current Continuous Drain Id 25°C
115mA (Ta)
Configuration
Single
Channel Mode
Enhancement

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