2N7000 NTE ELECTRONICS INC TO-92 MOS Field Effect Transistors

2N7000
  • 2N7000

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  • Part Number
  • 2N7000
  • Brand
  • NTE ELECTRONICS INC
  • Product Categories
  • FETs - Single
  • Package
  • TO-92
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The 2N7000 from NTE ELECTRONICS INC manufacturer is a FETs - Single with MOSFET N-CH 60V 200MA . The 2N7000 is N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3 Trans MOSFET N-CH 60V 0.35A 3-Pin TO-92 Bag MOSFET N-CHANNEL 60V 200mA. More details for 2N7000 can be seen below.

Details

N-Channel 60V 200mA (Ta) 400mW (Ta) Through Hole TO-92-3
Trans MOSFET N-CH 60V 0.35A 3-Pin TO-92 Bag
MOSFET N-CHANNEL 60V 200mA
Categories
MOS Field Effect Transistors
Manufacturer
NTE ELECTRONICS INC
Veswin Part Number
V107110-2N7000-NTE-Electronics-Inc
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 19 - May 24 (Choose Expedited Shipping)
EDA / CAD Models
2N7000 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Vgs th Max Id
3V @ 1mA
Vgs Gate Source Voltage
20 V
Vds Drain Source Breakdown Voltage
60 V
Unit Weight
0.007090 oz
Transistor Type
1 N-Channel
Transistor Polarity
N-Channel
Technology
Si
Supplier Device Package
TO-92-3
Rds On Max Id Vgs
5 Ohm @ 500mA, 10V
Rds On Drain Source Resistance
1.2 Ohms
Power Max
400mW
Pd Power Dissipation
400 mW
Part Aliases
2N7000_NL
Packaging
Bulk
Package Case
TO-226-3, TO-92-3 (TO-226AA)
Operating Temperature
-55°C ~ 150°C (TJ)
Number of Channels
1 Channel
Mounting Style
Through Hole
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Maximum Operating Temperature
+ 150 C
Input Capacitance Ciss Vds
50pF @ 25V
Id Continuous Drain Current
200 mA
Gate Charge Qg Vgs
-
Forward Transconductance Min
0.1 S
FET Type
MOSFET N-Channel, Metal Oxide
FET Feature
Standard
Drain to Source Voltage Vdss
60V
Current Continuous Drain Id 25°C
200mA (Ta)
Configuration
Single
Channel Mode
Enhancement

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