2N3019 CENTRAL/ISC TO-39 Transistors

2N3019
  • 2N3019

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  • Part Number
  • 2N3019
  • Brand
  • CENTRAL ISC
  • Product Categories
  • Transistors (BJT) - Single
  • Package
  • TO-39
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The 2N3019 from CENTRAL/ISC manufacturer is a Transistors (BJT) - Single with isc Silicon NPN Power Transistor. The 2N3019 is Bipolar (BJT) Transistor NPN 80V 1A 100MHz 800mW Through Hole TO-39 Trans GP BJT NPN 80V 1A 3-Pin TO-39 Bipolar Transistors - BJT NPN Gen Pur SS. More details for 2N3019 can be seen below.

Details

Bipolar (BJT) Transistor NPN 80V 1A 100MHz 800mW Through Hole TO-39
Trans GP BJT NPN 80V 1A 3-Pin TO-39
Bipolar Transistors - BJT NPN Gen Pur SS
Categories
Transistors
Manufacturer
CENTRAL/ISC
Veswin Part Number
V1070-2N3019
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Condition
New & Original - Factory Package
Stock Status
In-Stock Inventory
Minimum order
1
Estimated Delivery Time
On May 03 - May 08 (Choose Expedited Shipping)
EDA / CAD Models
2N3019 by SnapEDA
Storage Condition
Dry storage cabinet & Humidity protection package
Voltage Collector Emitter Breakdown Max
80V
Vce Saturation Max Ib Ic
500mV @ 50mA, 500mA
Transistor Type
NPN
Transistor Polarity
NPN
Supplier Device Package
TO-5
Series
2N3019
Power Max
800mW
Part Aliases
BK
Packaging
Bulk
Package Case
TO-205AA, TO-5-3 Metal Can
Mounting Style
Through Hole
Mounting Type
Through Hole
Maximum Operating Temperature
+ 200 C
Maximum DC Collector Current
1 A
Gain Bandwidth Product fT
100 MHz
Frequency Transition
-
Emitter Base Voltage VEBO
7 V
DC Current Gain hFE Min Ic Vce
50 @ 500mA, 10V
DC Collector Base Gain hfe Min
40 at 150 mA 10 V
Current Collector Ic Max
1A
Current Collector Cutoff Max
10μA (ICBO)
Continuous Collector Current
1 A
Configuration
Single
Collector Emitter Voltage VCEO Max
80 V
Collector Emitter Saturation Voltage
500 mV
Collector Base Voltage VCBO
140 V

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