The ZXMC10A816N8TC from DIODES manufacturer is a MOS Field Effect Transistors with MOSFET N/P-CH 100V 2A 8-SOIC.
The ZXMC10A816N8TC is Mosfet Array N and P-Channel 100V 2A 1.8W Surface Mount 8-SOP Trans MOSFET N/P-CH 100V 2.1A/2.2A Automotive 8-Pin SO T/R MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE. More details for ZXMC10A816N8TC can be seen below.
Details
Mosfet Array N and P-Channel 100V 2A 1.8W Surface Mount 8-SOP
Trans MOSFET N/P-CH 100V 2.1A/2.2A Automotive 8-Pin SO T/R
MOSFET 100V COMPLEMENTARY DUAL ENHANCEMNT MODE
- Categories
- MOS Field Effect Transistors
- Manufacturer
- Diodes Incorporated
- Veswin Part Number
- V107110-ZXMC10A816N8TC
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On Apr 02 - Apr 07 (Choose Expedited Shipping)
- EDA / CAD Models
- ZXMC10A816N8TC by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2.4V @ 250μA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- 100 V
- Unit Weight
- 0.002610 oz
- Typical Turn On Delay Time
- 2.9 ns 4.3 ns
- Typical Turn Off Delay Time
- 12.1 ns 20 ns
- Transistor Type
- 1 N-Channel 1 P-Channel
- Transistor Polarity
- N-Channel P-Channel
- Technology
- Si
- Supplier Device Package
- 8-SOP
- Series
- ZXMC10A8
- Rise Time
- 2.1 ns 5.2 ns
- Rds On Max Id Vgs
- 230 mOhm @ 1A, 10V
- Rds On Drain Source Resistance
- 230 mOhms 235 mOhms
- Power Max
- 1.8W
- Pd Power Dissipation
- 2.1 W
- Packaging
- Digi-ReelR Alternate Packaging
- Package Case
- 8-SOIC (0.154", 3.90mm Width)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 2 Channel
- Mounting Style
- SMD/SMT
- Mounting Type
- Surface Mount
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 497pF @ 50V
- Id Continuous Drain Current
- 2.1 A
- Gate Charge Qg Vgs
- 9.2nC @ 10V
- FET Type
- N and P-Channel
- FET Feature
- Logic Level Gate
- Fall Time
- 5 ns 12 ns
- Drain to Source Voltage Vdss
- 100V
- Current Continuous Drain Id 25°C
- 2A
- Configuration
- N-Channel P-Channel
- Channel Mode
- Enhancement
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