The TP2104N3-G from SUPERTEX manufacturer is a IC Chips with P-Channel Enhancement Mode Vertical DMOS FETs
TP2104N3-G
P-Channel Enhancement Mode Vertical DMOS FETs
Supertex, Inc
TP2104
P-Channel Enhancement-Mode Vertical DMOS FETs
TP2104
P-Channel Enhancement Mode Vertical DMOS FETs
TP2104
P-Channel Enhancement Mode Vertical DMOS FETs
TP2104K1
P-Channel Enhancement-Mode Vertical DMOS FETs
TP2104K1-G
P-Channel Enhancement Mode Vertic.
The TP2104N3-G is P-Channel 40V 175mA (Tj) 740mW (Ta) Through Hole TO-92-3 Trans MOSFET P-CH Si 40V 0.25A 3-Pin TO-92 Bag MOSFET 40V 6Ohm. More details for TP2104N3-G can be seen below.
Details
P-Channel 40V 175mA (Tj) 740mW (Ta) Through Hole TO-92-3
Trans MOSFET P-CH Si 40V 0.25A 3-Pin TO-92 Bag
MOSFET 40V 6Ohm
- Categories
- Transistors
- Manufacturer
- Supertex, Inc
- Veswin Part Number
- V1070-TP2104N3-G
- Lead Free Status / RoHS Status
- Lead free / RoHS Compliant
- Condition
- New & Original - Factory Package
- Stock Status
- In-Stock Inventory
- Minimum order
- 1
- Estimated Delivery Time
- On May 01 - May 06 (Choose Expedited Shipping)
- EDA / CAD Models
- TP2104N3-G by SnapEDA
- Storage Condition
- Dry storage cabinet & Humidity protection package
- Vgs th Max Id
- 2V @ 1mA
- Vgs Gate Source Voltage
- 20 V
- Vds Drain Source Breakdown Voltage
- - 40 V
- Unit Weight
- 0.016000 oz
- Typical Turn On Delay Time
- 4 ns
- Typical Turn Off Delay Time
- 5 ns
- Transistor Type
- 1 P-Channel
- Transistor Polarity
- P-Channel
- Technology
- Si
- Supplier Device Package
- TO-92-3
- Rise Time
- 4 ns
- Rds On Max Id Vgs
- 6 Ohm @ 500mA, 10V
- Rds On Drain Source Resistance
- 6 Ohms
- Power Max
- 740mW
- Pd Power Dissipation
- 740 mW
- Packaging
- Alternate Packaging
- Package Case
- TO-226-3, TO-92-3 (TO-226AA)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Number of Channels
- 1 Channel
- Mounting Style
- Through Hole
- Mounting Type
- Through Hole
- Minimum Operating Temperature
- - 55 C
- Maximum Operating Temperature
- + 150 C
- Input Capacitance Ciss Vds
- 60pF @ 25V
- Id Continuous Drain Current
- - 250 mA
- Gate Charge Qg Vgs
- -
- FET Type
- MOSFET P-Channel, Metal Oxide
- FET Feature
- Logic Level Gate
- Fall Time
- 4 ns
- Drain to Source Voltage Vdss
- 40V
- Current Continuous Drain Id 25°C
- 175mA (Tj)
- Configuration
- Single
- Channel Mode
- Enhancement
![SUPERTEX Inventory]( "SUPERTEX Inventory")
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Veswin is an electronic component distributor for commodity, common, obsolete / hard to find electronic components. Veswin supplies Industrial,
Commercial and Mil-Spec components to OEM customers, CEM customers and Repair Centers worldwide. We maintain a large inventory of electronic components,
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- A: Please click on the "Add to Cart" Button and then proceed to checkout.
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- A: We accept T/T(Bank wire), Paypal, Credit card Payment through PayPal.
- Q: How Long Can I Get The TP2104N3-G?
-
A: We will ship via FedEx or DHL or UPS, Normally will take 4 or 5 days to arrive at your office.
We can also ship via registered airmail, Normally will take 14-38 days to arrive at your office.
Please choose your preferred shipping method when checking out on our website.
- Q: TP2104N3-G Warranty?
- A: We Provide 90 days warranty for our product.
- Q: TP2104N3-G Technical Support?
-
A: Yes, Our product technical engineer will help you with the TP2104N3-G pinout information, application notes, replacement,
datasheet in pdf, manual, schematic, equivalent, cross reference.
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Quality Systems Registrar, certified Veswin Electronics to ISO 9001 standards. Our systems and compliance with the standards have been, and continue to be, regularly reviewed and tested to maintain continuous conformance.
